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Nonradiative step facets in semiconductor nanowires

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Sánchez, Ana M., Zhang, Yunyan, Tait, Edward W., Hine, Nicholas, Liu, Huiyun and Beanland, R. (2017) Nonradiative step facets in semiconductor nanowires. Nano Letters, 17 (4). pp. 2454-2459. doi:10.1021/acs.nanolett.7b00123 ISSN 1530-6984.

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Official URL: http://dx.doi.org/10.1021/acs.nanolett.7b00123

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Abstract

One of the main advantages of nanowires for functional applications is their high perfection, which results from surface image forces that act on line defects such as dislocations, rendering them unstable and driving them out of the crystal. Here we show that there is a class of step facets that are stable in nanowires, with no long-range strain field or dislocation character. In zinc-blende semiconductors, they take the form of Σ3 (112) facets with heights constrained to be a multiple of three {111} monolayers. Density functional theory calculations show that they act as nonradiative recombination centers and have deleterious effects on nanowire properties. We present experimental observations of these defects on twin boundaries and twins that terminate inside GaAsP nanowires and find that they are indeed always multiples of three monolayers in height. Strategies to use the three-monolayer rule during growth to prevent their formation are discussed.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Semiconductors, Nanowires
Journal or Publication Title: Nano Letters
Publisher: American Chemical Society
ISSN: 1530-6984
Official Date: 12 April 2017
Dates:
DateEvent
12 April 2017Published
24 March 2017Available
24 March 2017Accepted
Volume: 17
Number: 4
Page Range: pp. 2454-2459
DOI: 10.1021/acs.nanolett.7b00123
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 27 April 2017
Date of first compliant Open Access: 24 March 2018
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/P000886/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/G037221/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
UNSPECIFIEDLeverhulme Trusthttp://dx.doi.org/10.13039/501100000275
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