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Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization

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Herling, F., Morrison, Christopher, Knox, C. S., Zhang, S., Newell, Oliver, Myronov, Maksym, Linfield, E. H. and Marrows, C. H. (2017) Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization. Physical Review B (Condensed Matter and Materials Physics), 95 (15). 155307 . doi:10.1103/PhysRevB.95.155307

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Official URL: http://dx.doi.org/10.1103/PhysRevB.95.155307

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Abstract

We study the spin-orbit interaction (SOI) in InAs/GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Quantum wells, Heterostructures, Spintronics , Electron gas
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 2469-9950
Official Date: 10 April 2017
Dates:
DateEvent
10 April 2017Available
10 April 2017Accepted
Volume: 95
Number: 15
Article Number: 155307
DOI: 10.1103/PhysRevB.95.155307
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Erasmus Mundus (Program)
Grant number: EP/M000923/1 (EPSRC)

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