The sub-micrometer thickness n-InSb/i-GaAs epilayers for magnetoresistor applications at room temperatures of operation
UNSPECIFIED (2004) The sub-micrometer thickness n-InSb/i-GaAs epilayers for magnetoresistor applications at room temperatures of operation. In: 11th International Conference on Narrow Gap Semiconductors, UNIV BUFFALO, BUFFALO, NEW YORK, JUN 16-20, 2003. Published in: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 20 (3-4). pp. 523-526.Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.physe.2003.09.002
Magnetotransport at fields up to 500 mT and LF-noise characteristics are reported for miniature magnetoresistors with ferrite concentrators based on Sn-doped n-InSb/i-GaAs heterostructures grown by MBE. The thickness of the InSb epilayers lie in the range 0.55-1.5 mum giving room temperature mobilities of 2.5-5.5 m(2) V-1 S-1 with carrier densities of (0.5-1.5) x 10(17) cm(-3). The room temperature magnetoresistance (MR) for our two terminal devices could be as high as 115% at 50 mT which is comparable to the extraordinary MR (ExMR) recently reported in microscopic composite van der Pauw disks four terminal devices [Science 289 (2000) 1530]. In addition, a high signal-to-noise ratio and a good temperature stability of R(B)/R-0 = 0.5-0.83% K-1 was observed for B < 60 mT (below the saturation field B-sat for ferrite). Device resistance stability R-0(T) was equal to 0.27-0.66% K-1 in zero field with a nominal device resistance R-0 = 197-224 Omega for DC currents in the range I = 0.01-1.0 mA. The minimum detectable magnetic field is estimated from the reduced differential MR (partial derivativeR/partial derivativeB)/R = 2000% T-1 at B = 31 mT and normalised 1/f current noise power spectral density measured at the same field. The resolution limit B-min = 2.6 nT at 10(2) Hz and B-min = 0.82 nT at 10(3) Hz. These resolution limits are seven times better than those recently reported for the same material n-InSb/i-GaAs and ferrite fabricated Hall sensors [Magnetotransport and Raman characterization of n-InSb/i-GaAs epilayers, for Hall sensors applications over extremely wide ranges of temperature and magnetic field, Proceedings NGS 10, IPAP Conference Series 2, IPAP, Tokyo, 2001, pp. 151-154]. (C) 2003 Elsevier B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
Q Science > QC Physics
|Journal or Publication Title:||PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||January 2004|
|Number of Pages:||4|
|Page Range:||pp. 523-526|
|Title of Event:||11th International Conference on Narrow Gap Semiconductors|
|Location of Event:||UNIV BUFFALO, BUFFALO, NEW YORK|
|Date(s) of Event:||JUN 16-20, 2003|
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