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Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating
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Russell, Stephen, Pérez-Tomás, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.) and Jennings, Michael R. (2017) Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4). pp. 256-261.
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WRAP-heteroepitaxial-beta-Ga2O3-4H-SiC-Russell-2017.pdf - Accepted Version - Requires a PDF viewer. Download (919Kb) | Preview |
Official URL: https://doi.org/10.1109/JEDS.2017.2706321
Abstract
A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature is observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.
| Item Type: | Journal Article | ||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon carbide, Power electronics | ||||||||
| Journal or Publication Title: | Journal of the Electron Devices Society | ||||||||
| Publisher: | IEEE | ||||||||
| ISSN: | 2168-6734 | ||||||||
| Official Date: | July 2017 | ||||||||
| Dates: |
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| Date of first compliant deposit: | 17 May 2017 | ||||||||
| Volume: | 5 | ||||||||
| Number: | 4 | ||||||||
| Page Range: | pp. 256-261 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Open Access | ||||||||
| Funder: | University of Warwick. Advanced Propulsion Centre |
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