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Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating

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Russell, Stephen, Pérez-Tomás, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.) and Jennings, Michael R. (2017) Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4). pp. 256-261.

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Official URL: https://doi.org/10.1109/JEDS.2017.2706321

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Abstract

A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature is observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Engineering
Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors, Silicon carbide, Power electronics
Journal or Publication Title: Journal of the Electron Devices Society
Publisher: IEEE
ISSN: 2168-6734
Official Date: July 2017
Dates:
DateEvent
July 2017Published
19 May 2017Available
17 May 2017Accepted
Volume: 5
Number: 4
Page Range: pp. 256-261
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
Funder: University of Warwick. Advanced Propulsion Centre

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