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Intrinsic electron accumulation at clean InN surfaces
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UNSPECIFIED. (2004) Intrinsic electron accumulation at clean InN surfaces. PHYSICAL REVIEW LETTERS, 92 (3). -. ISSN 0031-9007
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Official URL: http://dx.doi.org/10.1103/PhysRevLett.92.036804
Abstract
The electronic structure of clean InN(0001) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy of the conduction band electron plasmon excitations. An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN. As a result, surface Fermi level pinning high in the conduction band in the vicinity of the Gamma point, but near the average midgap energy, produces charged donor-type surface states with associated downward band bending. Semiclassical dielectric theory simulations of the energy-loss spectra and charge-profile calculations indicate a surface state density of 2.5 (+/-0.2)x10(13) cm(-2) and a surface Fermi level of 1.64+/-0.10 eV above the valence band maximum.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | PHYSICAL REVIEW LETTERS |
| Publisher: | AMERICAN PHYSICAL SOC |
| ISSN: | 0031-9007 |
| Date: | 23 January 2004 |
| Volume: | 92 |
| Number: | 3 |
| Number of Pages: | 4 |
| Page Range: | - |
| Identification Number: | 10.1103/PhysRevLett.92.036804 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/8847 |
Data sourced from Thomson Reuters' Web of Knowledge
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