Intrinsic electron accumulation at clean InN surfaces
UNSPECIFIED. (2004) Intrinsic electron accumulation at clean InN surfaces. PHYSICAL REVIEW LETTERS, 92 (3). -. ISSN 0031-9007Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevLett.92.036804
The electronic structure of clean InN(0001) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy of the conduction band electron plasmon excitations. An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN. As a result, surface Fermi level pinning high in the conduction band in the vicinity of the Gamma point, but near the average midgap energy, produces charged donor-type surface states with associated downward band bending. Semiclassical dielectric theory simulations of the energy-loss spectra and charge-profile calculations indicate a surface state density of 2.5 (+/-0.2)x10(13) cm(-2) and a surface Fermi level of 1.64+/-0.10 eV above the valence band maximum.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW LETTERS|
|Publisher:||AMERICAN PHYSICAL SOC|
|Date:||23 January 2004|
|Number of Pages:||4|
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