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Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal-oxide-semiconductor field-effect transistor
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UNSPECIFIED. (2004) Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal-oxide-semiconductor field-effect transistor. APPLIED PHYSICS LETTERS, 84 (4). pp. 610-612. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.1643532
Abstract
We have demonstrated reduced 1/f low-frequency noise in sub-mum metamorphic high Ge content p-Si0.3Ge0.7 metal-oxide-semiconductor field-effect transistors (MOSFETs) at 293 K. Three times lower normalized power spectral density (NPSD) S-I D/I-D(2) of drain current fluctuations over the 1-100 Hz range at V-DS=-50 mV and V-G-V-th=-1.5 V was measured for a 0.55 mum effective gate length p-Si0.3Ge0.7 MOSFET compared with a p-Si MOSFET. Performed quantitative analysis clearly demonstrates the importance of carrier number fluctuations and correlated mobility fluctuations (CMFs) components of 1/f noise for p-Si surface channel MOSFETs, and the absence of CMFs for p-Si0.3Ge0.7 buried channel MOSFETs. This explains the reduced NPSD for p-Si0.3Ge0.7 MOSFETs in strong inversion. (C) 2004 American Institute of Physics.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | APPLIED PHYSICS LETTERS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0003-6951 |
| Date: | 26 January 2004 |
| Volume: | 84 |
| Number: | 4 |
| Number of Pages: | 3 |
| Page Range: | pp. 610-612 |
| Identification Number: | 10.1063/1.1643532 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/8885 |
Data sourced from Thomson Reuters' Web of Knowledge
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