Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal-oxide-semiconductor field-effect transistor
UNSPECIFIED. (2004) Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal-oxide-semiconductor field-effect transistor. APPLIED PHYSICS LETTERS, 84 (4). pp. 610-612. ISSN 0003-6951Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.1643532
We have demonstrated reduced 1/f low-frequency noise in sub-mum metamorphic high Ge content p-Si0.3Ge0.7 metal-oxide-semiconductor field-effect transistors (MOSFETs) at 293 K. Three times lower normalized power spectral density (NPSD) S-I D/I-D(2) of drain current fluctuations over the 1-100 Hz range at V-DS=-50 mV and V-G-V-th=-1.5 V was measured for a 0.55 mum effective gate length p-Si0.3Ge0.7 MOSFET compared with a p-Si MOSFET. Performed quantitative analysis clearly demonstrates the importance of carrier number fluctuations and correlated mobility fluctuations (CMFs) components of 1/f noise for p-Si surface channel MOSFETs, and the absence of CMFs for p-Si0.3Ge0.7 buried channel MOSFETs. This explains the reduced NPSD for p-Si0.3Ge0.7 MOSFETs in strong inversion. (C) 2004 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||26 January 2004|
|Number of Pages:||3|
|Page Range:||pp. 610-612|
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