A comparative study for profiling ultrathin boron layers in Si
UNSPECIFIED. (2003) A comparative study for profiling ultrathin boron layers in Si. CRYSTAL RESEARCH AND TECHNOLOGY, 38 (12). pp. 1037-1041. ISSN 0232-1300Full text not available from this repository.
Official URL: http://dx.doi.org/10.1002/crat.200310132
The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance-voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a delta layer, however ECV match better with the results of SIMS than that of SR. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Item Type:||Journal Article|
|Subjects:||Q Science > QD Chemistry|
|Journal or Publication Title:||CRYSTAL RESEARCH AND TECHNOLOGY|
|Publisher:||WILEY-V C H VERLAG GMBH|
|Number of Pages:||5|
|Page Range:||pp. 1037-1041|
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