The Library
A comparative study for profiling ultrathin boron layers in Si
Tools
Tools
Tools
UNSPECIFIED. (2003) A comparative study for profiling ultrathin boron layers in Si. CRYSTAL RESEARCH AND TECHNOLOGY, 38 (12). pp. 1037-1041. ISSN 0232-1300
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1002/crat.200310132
Abstract
The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance-voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a delta layer, however ECV match better with the results of SIMS than that of SR. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QD Chemistry |
| Journal or Publication Title: | CRYSTAL RESEARCH AND TECHNOLOGY |
| Publisher: | WILEY-V C H VERLAG GMBH |
| ISSN: | 0232-1300 |
| Date: | 2003 |
| Volume: | 38 |
| Number: | 12 |
| Number of Pages: | 5 |
| Page Range: | pp. 1037-1041 |
| Identification Number: | 10.1002/crat.200310132 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/8944 |
Data sourced from Thomson Reuters' Web of Knowledge
Actions (login required)
 |
View Item |
