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Structural stability of naphthyl end-capped oligothiophenes in organic field-effect transistors measured by grazing-incidence X-ray diffraction in operando
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Huss-Hansen, Mathias K., Lauritzen, Andreas E., Bikondoa, Oier, Torkkeli, Mika, Tavares, Luciana, Knaapila, Matti and Kjelstrup-Hansen, Jakob (2017) Structural stability of naphthyl end-capped oligothiophenes in organic field-effect transistors measured by grazing-incidence X-ray diffraction in operando. Organic Electronics, 49 . pp. 375-381. doi:10.1016/j.orgel.2017.07.012 ISSN 1566-1199.
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WRAP-Structural-naphthyl-end-capped-oligothiophenes-Bikondoa-2017.pdf - Accepted Version - Requires a PDF viewer. Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0. Download (1244Kb) | Preview |
Official URL: http://dx.doi.org/10.1016/j.orgel.2017.07.012
Abstract
We report on microstructural durability of 5,5′-bis(naphth-2-yl)-2,2′-bithiophene (NaT2) in organic field effect transistors (OFETs) in operando monitored by grazing-incidence X-ray diffraction (GIXRD). NaT2 maintains its monoclinic bulk motif in operating OFETs with a=20.31±0.06 Å, b=6.00±0.01 Å, c=8.17±0.04 Å and β=(96.64±0.74)∘. Crystallites appear as a mosaic of single crystals reaching through the whole 50 nm thick active layer. The lattice parameters variation (<1%) falls within the statistical error of structure refinement when the OFET gate voltage is varied from 0 V to −40 V; or when the OFET is continuously cycled within this voltage interval over more than 10 h period. Within the first few cycles, both the hole mobility and threshold voltage are changing but then reach stable levels with an average mobility of View the MathML source and an average threshold voltage of −13.6±0.2 V, both varying less than 4% for the remainder of the 10 h period. This demonstrates crystalline stability of NaT2 in operating OFETs.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
| Library of Congress Subject Headings (LCSH): | Organic field-effect transistors, Organic electronics | ||||||||
| Journal or Publication Title: | Organic Electronics | ||||||||
| Publisher: | Elsevier BV | ||||||||
| ISSN: | 1566-1199 | ||||||||
| Official Date: | October 2017 | ||||||||
| Dates: |
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| Volume: | 49 | ||||||||
| Page Range: | pp. 375-381 | ||||||||
| DOI: | 10.1016/j.orgel.2017.07.012 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 11 July 2017 | ||||||||
| Date of first compliant Open Access: | 8 July 2018 | ||||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Syddansk universitet [University of Southern Denmark], Horizon 2020 (European Commission) (H2020), Danish Council for Independent Research |
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