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Silicon-based single quantum dot emission in the telecoms C-band
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Orchard, Jonathan R., Woodhead, Chris, Wu, Jiang, Tang, Mingchu, Beanland, R., Noori, Yasir, Liu, Huiyun, Young, Robert and Mowbray, David J. (2017) Silicon-based single quantum dot emission in the telecoms C-band. ACS Photonics, 4 (7). pp. 1740-1746. doi:10.1021/acsphotonics.7b00276 ISSN 2330-4022.
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Official URL: https://doi.org/10.1021/acsphotonics.7b00276
Abstract
We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||
| SWORD Depositor: | Library Publications Router | ||||||
| Journal or Publication Title: | ACS Photonics | ||||||
| Publisher: | American Chemical Society (ACS) | ||||||
| ISSN: | 2330-4022 | ||||||
| Official Date: | 20 June 2017 | ||||||
| Dates: |
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| Volume: | 4 | ||||||
| Number: | 7 | ||||||
| Page Range: | pp. 1740-1746 | ||||||
| DOI: | 10.1021/acsphotonics.7b00276 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Reuse Statement (publisher, data, author rights): | ** From Crossref via Jisc Publications Router. | ||||||
| Access rights to Published version: | Open Access (Creative Commons) |
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