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Pressure contact multi-chip packaging of SiC Schottky diodes
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Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Aliyu, A. M. and Castellazzi, A. (2017) Pressure contact multi-chip packaging of SiC Schottky diodes. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, Japan, 28 May-1 Jun 2017. Published in: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ISBN 9784886860941.
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WRAP-pressure-contact-multi-chip-packaging-diodes-Ortiz-2017.pdf - Accepted Version - Requires a PDF viewer. Download (1191Kb) | Preview |
Official URL: http://doi.org/10.23919/ISPSD.2017.7988977
Abstract
Pressure contact packages have demonstrated an improved reliability for silicon devices due to the elimination of the weak elements of the packaging, namely wirebonds and solder. This packaging approach has not yet been widely studied for SiC devices, however, it is of high interest for applications like HVDC or rail traction, where the wide bandgap properties of SiC devices can be fully exploited and high reliability is critical. Current IGBT press-pack modules use Si PIN diodes for enabling reverse conduction, however, the use of SiC Schottky diodes would be beneficial given their better characteristics including low switching losses and lower zero temperature coefficient (ZTC) for electrothermal stability of diodes in parallel. A prototype for the evaluation of SiC Schottky diodes using pressure contacts has been designed, built and tested for both single die and multiple die.
Item Type: | Conference Item (Paper) | ||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Diodes, Schottky-barrier, Silicon carbide | ||||||
Journal or Publication Title: | 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) | ||||||
Publisher: | IEEE Computer Society | ||||||
ISBN: | 9784886860941 | ||||||
Official Date: | 24 July 2017 | ||||||
Dates: |
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Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Date of first compliant deposit: | 22 August 2017 | ||||||
Date of first compliant Open Access: | 23 August 2017 | ||||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||||
Grant number: | EP/L007010/1, EP/K034804/1, EP/K035304/1 | ||||||
Conference Paper Type: | Paper | ||||||
Title of Event: | 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) | ||||||
Type of Event: | Conference | ||||||
Location of Event: | Sapporo, Japan | ||||||
Date(s) of Event: | 28 May-1 Jun 2017 |
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