Li, Fan, Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Pathirana, V., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of a power Si/SiC LDMOSFET for high temperature applications. Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT), 2017 (HiTen). 000219-000222. doi:10.4071/2380-4491.2017.HiTEN.219 ISSN 2380-4491.

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Abstract

Power Si/SiC LDMOSFET are being developed for the benefits of high temperature space and terrestrial harsh-environment applications. For the first time, high voltage devices are fabricated on a direct bonded Si/SiC substrate and characterised at room temperature. Peak field-effect channel mobility of the fabricated MOSFET reached ≈300 cm2/V.s and the avalanche breakdown was not observed up to 200 V, despite of a high leakage current in the device off-mode.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title:	Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT)
Publisher:	International Microelectronics Assembly and Packaging Society
ISSN:	2380-4491
Official Date:	July 2017
Dates:	Date Event July 2017 Published 28 March 2017 Accepted
Volume:	2017
Number:	HiTen
Page Range:	000219-000222
DOI:	10.4071/2380-4491.2017.HiTEN.219
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Date of first compliant deposit:	4 September 2017

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