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The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices
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Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897 . pp. 747-750. doi:10.4028/www.scientific.net/MSF.897.747
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WRAP-effect-interfacial-charge-development-wafer-bonded-Gammon-2017.pdf - Accepted Version - Requires a PDF viewer. Download (1031Kb) | Preview |
Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.8...
Abstract
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of silicon-on-insulator (SOI) technology with that of SiC. Here, details of a process are given to produce thin films of silicon 1 and 2 μm thick on the SiC. Simple metal-oxide-semiconductor capacitors (MOS-Cs) and Schottky diodes in these layers revealed that the Si device layer that had been expected to be n-type, was now behaving as a p-type semiconductor. Transmission electron microscopy (TEM) of the interface revealed that the high temperature process employed to transfer the Si device layer from the SOI to the SiC substrate caused lateral inhomogeneity and damage at the interface. This is expected to have increased the amount of trapped charge at the interface, leading to Fermi pinning at the interface, and band bending throughout the Si layer.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Power electronics, Semiconductors -- Materials, Silicon carbide, Metal oxide semiconductors, Transmission electron microscopy, Silicon-on-insulator technology | ||||||
| Journal or Publication Title: | Materials Science Forum | ||||||
| Publisher: | Trans Tech Publications Ltd. | ||||||
| ISSN: | 1662-9752 | ||||||
| Official Date: | May 2017 | ||||||
| Dates: |
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| Date of first compliant deposit: | 4 September 2017 | ||||||
| Volume: | 897 | ||||||
| Page Range: | pp. 747-750 | ||||||
| DOI: | 10.4028/www.scientific.net/MSF.897.747 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Funder: | Horizon 2020 (European Commission) (H2020), Royal Academy of Engineering (Great Britain), Engineering and Physical Sciences Research Council (EPSRC) | ||||||
| Grant number: | EP/N00647X/1 (EPSRC) |
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