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Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications
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Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16 . 12003. doi:10.1051/e3sconf/20171612003
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WRAP-design-fabrication-silicon-on-silicon-carbide-substrates-Gammon-2017.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (1436Kb) | Preview |
Official URL: http://dx.doi.org/10.1051/e3sconf/20171612003
Abstract
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to silicon carbide (SiC). This novel silicon-on-silicon-carbide (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology (i.e device confinement, radiation tolerance, high and low temperature performance) with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance). Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) | ||||||
| Divisions: | Faculty of Science > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Silicon carbide -- Thermal properties, Semiconductors, Power electronics -- Design and construction, Astronautics -- Technological innovations | ||||||
| Journal or Publication Title: | E3S Web of Conferences | ||||||
| Publisher: | EDP Sciences | ||||||
| ISSN: | 2267-1242 | ||||||
| Official Date: | 23 May 2017 | ||||||
| Dates: |
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| Date of first compliant deposit: | 4 September 2017 | ||||||
| Volume: | 16 | ||||||
| Article Number: | 12003 | ||||||
| DOI: | 10.1051/e3sconf/20171612003 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Description: | 11th European Space Power Conference |
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| Funder: | Horizon 2020 (European Commission) (H2020), Royal Academy of Engineering (Great Britain), Engineering and Physical Sciences Research Council (EPSRC) | ||||||
| Grant number: | EP/N00647X/1 (EPSRC) |
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