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Numerical study of energy capability of Si/SiC LDMOSFETs
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Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751 ISSN 1662-9752.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.8...
Abstract
A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-μs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area
Item Type: | Journal Article | ||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon carbide | ||||||
Journal or Publication Title: | Materials Science Forum | ||||||
Publisher: | Trans Tech Publications Ltd. | ||||||
ISSN: | 1662-9752 | ||||||
Official Date: | 15 May 2017 | ||||||
Dates: |
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Volume: | 897 | ||||||
Page Range: | pp. 751-754 | ||||||
DOI: | 10.4028/www.scientific.net/MSF.897.751 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 12 September 2017 | ||||||
Date of first compliant Open Access: | 13 September 2017 | ||||||
Funder: | European Union (EU), Engineering and Physical Sciences Research Council (EPSRC), Royal Academy of Engineering (Great Britain) | ||||||
Grant number: | SaSHa Project (EU), EP/N00647X/1 (EPSRC) |
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