Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751

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Abstract

A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-μs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductor field-effect transistors, Silicon carbide
Journal or Publication Title:	Materials Science Forum
Publisher:	Trans Tech Publications Ltd.
ISSN:	1662-9752
Official Date:	15 May 2017
Dates:	Date Event 15 May 2017 Available 20 January 2017 Accepted
Volume:	897
Page Range:	pp. 751-754
DOI:	10.4028/www.scientific.net/MSF.897.751
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	European Union (EU), Engineering and Physical Sciences Research Council (EPSRC), Royal Academy of Engineering (Great Britain)
Grant number:	SaSHa Project (EU), EP/N00647X/1 (EPSRC)

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