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Numerical study of energy capability of Si/SiC LDMOSFETs

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Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751

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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.8...

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Abstract

A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-μs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors, Silicon carbide
Journal or Publication Title: Materials Science Forum
Publisher: Trans Tech Publications Ltd.
ISSN: 1662-9752
Official Date: 15 May 2017
Dates:
DateEvent
15 May 2017Available
20 January 2017Accepted
Volume: 897
Page Range: pp. 751-754
DOI: 10.4028/www.scientific.net/MSF.897.751
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: European Union (EU), Engineering and Physical Sciences Research Council (EPSRC), Royal Academy of Engineering (Great Britain)
Grant number: SaSHa Project (EU), EP/N00647X/1 (EPSRC)

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