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Numerical study of energy capability of Si/SiC LDMOSFETs
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Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751
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WRAP-numerical-study-energy-capability-Chan-2017.pdf - Accepted Version - Requires a PDF viewer. Download (1122Kb) | Preview |
Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.8...
Abstract
A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-μs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area
| Item Type: | Journal Article | ||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon carbide | ||||||
| Journal or Publication Title: | Materials Science Forum | ||||||
| Publisher: | Trans Tech Publications Ltd. | ||||||
| ISSN: | 1662-9752 | ||||||
| Official Date: | 15 May 2017 | ||||||
| Dates: |
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| Date of first compliant deposit: | 12 September 2017 | ||||||
| Volume: | 897 | ||||||
| Page Range: | pp. 751-754 | ||||||
| DOI: | 10.4028/www.scientific.net/MSF.897.751 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Funder: | European Union (EU), Engineering and Physical Sciences Research Council (EPSRC), Royal Academy of Engineering (Great Britain) | ||||||
| Grant number: | SaSHa Project (EU), EP/N00647X/1 (EPSRC) |
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