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Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x
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Segercrantz, N., Slotte, J., Makkonen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J. and Veal, T. D. (Tim D.) (2017) Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50 (29). 295102. doi:10.1088/1361-6463/aa779a ISSN 0022-3727.
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Official URL: http://dx.doi.org/10.1088/1361-6463/aa779a
Item Type: | Journal Article | ||||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||
Library of Congress Subject Headings (LCSH): | Gallium alloys, Antimony, Semiconductors | ||||||
Journal or Publication Title: | Journal of Physics D: Applied Physics | ||||||
Publisher: | IOP Publishing | ||||||
ISSN: | 0022-3727 | ||||||
Official Date: | 3 July 2017 | ||||||
Dates: |
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Volume: | 50 | ||||||
Number: | 29 | ||||||
Article Number: | 295102 | ||||||
DOI: | 10.1088/1361-6463/aa779a | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 13 September 2017 | ||||||
Date of first compliant Open Access: | 13 September 2017 | ||||||
Funder: | Suomen Akatemia [Academy of Finland], Engineering and Physical Sciences Research Council (EPSRC), University of Liverpool | ||||||
Grant number: | Projects 285809 and 293932 (Suomen Akatemia [Academy of Finland]), EP/G004447/2 (EPSRC), |
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