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The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy

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Bomphrey, John James, Ashwin, M. J. and Jones, T. S. (Tim S.) (2015) The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy. Journal of Crystal Growth, 420 . pp. 1-5. doi:10.1016/j.jcrysgro.2015.03.025

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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2015.03.025

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Abstract

We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of ~5.3×1010 cm−2. Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1–6 ML equivalent thickness, we observe an apparent value for the critical thickness for InSb/GaSb (001) deposition of 2.3±0.3 ML, for the growth temperatures of 275 °C and 320 °C.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science > Chemistry
Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Indium antimonide, Semiconductors, Molecular beam epitaxy
Journal or Publication Title: Journal of Crystal Growth
Publisher: Elsevier BV, North-Holland
ISSN: 0022-0248
Official Date: 15 June 2015
Dates:
DateEvent
15 June 2015Published
23 March 2015Available
13 March 2015Accepted
Volume: 420
Page Range: pp. 1-5
DOI: 10.1016/j.jcrysgro.2015.03.025
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/F041160/1

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