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The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy
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Bomphrey, John James, Ashwin, M. J. and Jones, T. S. (Tim S.) (2015) The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy. Journal of Crystal Growth, 420 . pp. 1-5. doi:10.1016/j.jcrysgro.2015.03.025
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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2015.03.025
Abstract
We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of ~5.3×1010 cm−2. Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1–6 ML equivalent thickness, we observe an apparent value for the critical thickness for InSb/GaSb (001) deposition of 2.3±0.3 ML, for the growth temperatures of 275 °C and 320 °C.
| Item Type: | Journal Article | ||||||||
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| Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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| Divisions: | Faculty of Science > Chemistry Faculty of Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Indium antimonide, Semiconductors, Molecular beam epitaxy | ||||||||
| Journal or Publication Title: | Journal of Crystal Growth | ||||||||
| Publisher: | Elsevier BV, North-Holland | ||||||||
| ISSN: | 0022-0248 | ||||||||
| Official Date: | 15 June 2015 | ||||||||
| Dates: |
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| Date of first compliant deposit: | 13 September 2017 | ||||||||
| Volume: | 420 | ||||||||
| Page Range: | pp. 1-5 | ||||||||
| DOI: | 10.1016/j.jcrysgro.2015.03.025 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||||||
| Grant number: | EP/F041160/1 |
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