Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Hole weak anti-localization in a strained-Ge surface quantum well

Tools
- Tools
+ Tools

Mizokuchi, R., Torresani, P., Maurand, R., Zeng, Z., Niquet, Y.-M., Myronov, Maksym and De Franceschi, S. (2017) Hole weak anti-localization in a strained-Ge surface quantum well. Applied Physics Letters, 111 (6). 063102. doi:10.1063/1.4997411

[img]
Preview
PDF
WRAP-hole-weak-anti-localization-strained-Ge-surface-quantum-well-Myronov-2017.pdf - Published Version - Requires a PDF viewer.

Download (1513Kb) | Preview
Official URL: http://dx.doi.org/10.1063/1.4997411

Request Changes to record.

Abstract

We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top gate electrode. This behavior is consistent with a Rashba-type spin-orbit coupling whose strength is proportional to the perpendicular electric field and hence to the carrier density. In the low-density, the single-subband regime, by fitting the weak anti-localization peak to an analytic model, we extract the characteristic transport time scales and a spin splitting energy ΔSO∼ΔSO∼ 1 meV. Tight-binding calculations show that ΔSO is dominated by a cubic term in the in-plane wave vector. Finally, we observe a weak anti-localization peak also for magnetic fields parallel to the quantum well and associate this finding to an effect of intersubband scattering induced by interface defects.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Germanium, Silicon, Spintronics, Quantum wells
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 8 August 2017
Dates:
DateEvent
8 August 2017Published
8 July 2017Accepted
Volume: 111
Number: 6
Article Number: 063102
DOI: 10.1063/1.4997411
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: France. Agence nationale de la recherche (ANR), European Research Council (ERC), Nanosciences Foundation
Grant number: TOPONANO project (ANR), Grant No. 280043 (ERC)

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us