Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure

Tools
- Tools
+ Tools

Knox, C. S., Morrison, C., Herling, F., Ritchie, D. A., Newell, Oliver, Myronov, Maksym, Linfield, E. H. and Marrows, C. H. (2017) Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure. Semiconductor Science and Technology, 32 (10). 104002. doi:10.1088/1361-6641/aa827e

Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1088/1361-6641/aa827e

Request Changes to record.

Abstract

InAs/GaSb coupled quantum well heterostructures are important semiconductor systems with applications ranging from spintronics to photonics. Most recently, InAs/GaSb heterostructures have been identified as candidate two-dimensional topological insulators, predicted to exhibit helical edge conduction via fully spin-polarised carriers. We study an InAs/GaSb double quantum well heterostructure with an AlSb barrier to decouple partially the 2D electrons and holes, and find conduction consistent with a 2D hole gas, with an effective mass of 0.235 ± 0.005 m 0, existing simultaneously with hybridised carriers with an effective mass of 0.070 ± 0.005 m 0, where m 0 is the bare electron mass.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Semiconductor Science and Technology
Publisher: Institute of Physics Publishing Ltd.
ISSN: 0268-1242
Official Date: 30 August 2017
Dates:
DateEvent
30 August 2017Published
27 July 2017Accepted
Volume: 32
Number: 10
Article Number: 104002
DOI: 10.1088/1361-6641/aa827e
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us