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Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure
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Knox, C. S., Morrison, C., Herling, F., Ritchie, D. A., Newell, Oliver, Myronov, Maksym, Linfield, E. H. and Marrows, C. H. (2017) Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure. Semiconductor Science and Technology, 32 (10). 104002. doi:10.1088/1361-6641/aa827e
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Official URL: http://dx.doi.org/10.1088/1361-6641/aa827e
Abstract
InAs/GaSb coupled quantum well heterostructures are important semiconductor systems with applications ranging from spintronics to photonics. Most recently, InAs/GaSb heterostructures have been identified as candidate two-dimensional topological insulators, predicted to exhibit helical edge conduction via fully spin-polarised carriers. We study an InAs/GaSb double quantum well heterostructure with an AlSb barrier to decouple partially the 2D electrons and holes, and find conduction consistent with a 2D hole gas, with an effective mass of 0.235 ± 0.005 m 0, existing simultaneously with hybridised carriers with an effective mass of 0.070 ± 0.005 m 0, where m 0 is the bare electron mass.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||||
| Journal or Publication Title: | Semiconductor Science and Technology | ||||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||||
| ISSN: | 0268-1242 | ||||||
| Official Date: | 30 August 2017 | ||||||
| Dates: |
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| Volume: | 32 | ||||||
| Number: | 10 | ||||||
| Article Number: | 104002 | ||||||
| DOI: | 10.1088/1361-6641/aa827e | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access |
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