In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth
UNSPECIFIED. (2003) In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth. Surface Science, 544 (2-3). pp. 234-240. ISSN 0039-6028Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.susc.2003.08.021
Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(001). At a substrate temperature of 400 degreesC under As-4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different  periodicities to those observed in quenched STM studies. (C) 2003 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Subjects:||Q Science > QD Chemistry
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||20 October 2003|
|Number of Pages:||7|
|Page Range:||pp. 234-240|
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