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In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth
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UNSPECIFIED. (2003) In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth. Surface Science, 544 (2-3). pp. 234-240. ISSN 0039-6028
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Official URL: http://dx.doi.org/10.1016/j.susc.2003.08.021
Abstract
Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(001). At a substrate temperature of 400 degreesC under As-4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [110] periodicities to those observed in quenched STM studies. (C) 2003 Elsevier B.V. All rights reserved.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QD Chemistry Q Science > QC Physics |
| Journal or Publication Title: | Surface Science |
| Publisher: | ELSEVIER SCIENCE BV |
| ISSN: | 0039-6028 |
| Date: | 20 October 2003 |
| Volume: | 544 |
| Number: | 2-3 |
| Number of Pages: | 7 |
| Page Range: | pp. 234-240 |
| Identification Number: | 10.1016/j.susc.2003.08.021 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/9218 |
Data sourced from Thomson Reuters' Web of Knowledge
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