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GasFETs incorporating conducting polymers as gate materials
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Hatfield, J. V., Covington, James A. and Gardner, J. W. (2000) GasFETs incorporating conducting polymers as gate materials. Sensors and Actuators B: Chemical, 65 (1-3). pp. 253-256. doi:10.1016/S0925-4005(99)00328-7
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Official URL: http://dx.doi.org/10.1016/S0925-4005(99)00328-7
Abstract
A gas sensitive field effect transistor with a conducting polymer gate is described (polyFET). The devices were fabricated as gateless FETs in an aluminium gate pMOS process. Post-processing steps were performed to provide the gateless devices with polypyrrole gates. On exposing the transistor gates to volatile compounds, the polyFETs experience a change in their threshold voltage which, in an appropriate circuit, manifests itself as a change in drain-source current. A number of results are presented.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Engineering | ||||
| Journal or Publication Title: | Sensors and Actuators B: Chemical | ||||
| Publisher: | Elsevier Science SA | ||||
| ISSN: | 0925-4005 | ||||
| Official Date: | 30 June 2000 | ||||
| Dates: |
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| Volume: | 65 | ||||
| Number: | 1-3 | ||||
| Page Range: | pp. 253-256 | ||||
| DOI: | 10.1016/S0925-4005(99)00328-7 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published |
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