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GasFETs incorporating conducting polymers as gate materials

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Hatfield, J. V., Covington, James A. and Gardner, J. W. (2000) GasFETs incorporating conducting polymers as gate materials. Sensors and Actuators B: Chemical, 65 (1-3). pp. 253-256. doi:10.1016/S0925-4005(99)00328-7 ISSN 0925-4005.

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Official URL: http://dx.doi.org/10.1016/S0925-4005(99)00328-7

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Abstract

A gas sensitive field effect transistor with a conducting polymer gate is described (polyFET). The devices were fabricated as gateless FETs in an aluminium gate pMOS process. Post-processing steps were performed to provide the gateless devices with polypyrrole gates. On exposing the transistor gates to volatile compounds, the polyFETs experience a change in their threshold voltage which, in an appropriate circuit, manifests itself as a change in drain-source current. A number of results are presented.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: Sensors and Actuators B: Chemical
Publisher: Elsevier Science SA
ISSN: 0925-4005
Official Date: 30 June 2000
Dates:
DateEvent
30 June 2000Published
Volume: 65
Number: 1-3
Page Range: pp. 253-256
DOI: 10.1016/S0925-4005(99)00328-7
Status: Peer Reviewed
Publication Status: Published

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