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Neutral silicon-vacancy center in diamond : spin polarization and lifetimes

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Green, Ben, Mottishaw, Sinead, Breeze, Ben, Edmonds, A. M., D'Haenens-Johansson, U. F. S., Doherty, M. W., Williams, S. D., Twitchen, D. J. and Newton, Mark E. (2017) Neutral silicon-vacancy center in diamond : spin polarization and lifetimes. Physical Review Letters, 119 (9). 096402. doi:10.1103/PhysRevLett.119.096402

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Official URL: http://doi.org/10.1103/PhysRevLett.119.096402

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Abstract

We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100  μs at low-temperature, and a spin relaxation limit of T_{1}>25  s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
SWORD Depositor: Library Publications Router
Library of Congress Subject Headings (LCSH): Diamond crystals -- Defects, Polarization (Nuclear physics)
Journal or Publication Title: Physical Review Letters
Publisher: American Physical Society
ISSN: 0031-9007
Official Date: 1 September 2017
Dates:
DateEvent
1 September 2017Published
31 August 2017Available
4 August 2017Accepted
Volume: 119
Number: 9
Article Number: 096402
DOI: 10.1103/PhysRevLett.119.096402
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/J500045/1 [EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/M013243/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
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