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Three-dimensional Anderson model of localization with binary random potential

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UNSPECIFIED. (2003) Three-dimensional Anderson model of localization with binary random potential. PHYSICAL REVIEW B, 68 (6). -. ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.68.064201

Abstract

We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA's). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broadening due to disorder and concentration of alloy composition. The appropriate phase diagrams of regions of extended and localized electronic states are studied and qualitative agreement with AMA's such as Ti-Ni and Ti-Cu metallic glasses is found. We estimate the critical exponents nu(W), nu(E) and nu(x) when either disorder W, energy E, or concentration x is varied, respectively. All our results are compatible with the universal value nuapproximate to1.6 obtained in the single-band Anderson model.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: PHYSICAL REVIEW B
Publisher: AMERICAN PHYSICAL SOC
ISSN: 1098-0121
Date: 1 August 2003
Volume: 68
Number: 6
Number of Pages: 8
Page Range: -
Identification Number: 10.1103/PhysRevB.68.064201
Publication Status: Published
URI: http://wrap.warwick.ac.uk/id/eprint/9321

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