Three-dimensional Anderson model of localization with binary random potential
UNSPECIFIED. (2003) Three-dimensional Anderson model of localization with binary random potential. PHYSICAL REVIEW B, 68 (6). -. ISSN 1098-0121Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevB.68.064201
We study the three-dimensional two-band Anderson model of localization and compare our results to experimental results for amorphous metallic alloys (AMA's). Using the transfer-matrix method, we identify and characterize the metal-insulator transitions as functions of Fermi level position, band broadening due to disorder and concentration of alloy composition. The appropriate phase diagrams of regions of extended and localized electronic states are studied and qualitative agreement with AMA's such as Ti-Ni and Ti-Cu metallic glasses is found. We estimate the critical exponents nu(W), nu(E) and nu(x) when either disorder W, energy E, or concentration x is varied, respectively. All our results are compatible with the universal value nuapproximate to1.6 obtained in the single-band Anderson model.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW B|
|Publisher:||AMERICAN PHYSICAL SOC|
|Official Date:||1 August 2003|
|Number of Pages:||8|
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