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The electromechanical properties of highly [100] oriented [Pb(Zr0.52ti0.48)O3, Pzt] thin films

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Marshall, Jessica M., Corkovic, S., Zhang, Q., Whatmore, R. W., Chima-Okereke, C., Roberts, W. L., Bushby, A. J. and Reece , M. J. (2006) The electromechanical properties of highly [100] oriented [Pb(Zr0.52ti0.48)O3, Pzt] thin films. Integrated Ferroelectrics, 80 (1). pp. 77-85. doi:10.1080/10584580600656437 ISSN 1058-4587.

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Official URL: http://dx.doi.org/10.1080/10584580600656437

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Abstract

Lead zirconate titanate [Pb(Zr0.52Ti0.48)O3, PZT] thin films were deposited on Pt (111)/Ti/SiO2/Si and Pt (200)/Ti/SiO2/Si substrates by sol-gel method. Pyrolysis temperature and time were used to control the orientation of the thin films. A PbO buffer layer was also used to enhance the growth of (100)/(001) orientation. Poling highly (100) oriented PZT 52/48 thin films deposited on Pt (111) led to cracking and/or incomplete poling as a consequence of the additional residual stresses introduced by the a to c domain orientation switching. These problems of cracking and incomplete poling did not occur for the (100)/(001)-oriented PZT films deposited on the Pt (200), which possess high piezoelectric coefficients with maximum e31,f and d33,f of −13.9± 4 C/m2 and ∼80± 25 pC/N, respectively. The elastic and electromechanical properties were measured using nanoindentation for films with different texture and compared with data obtained using a flexural method.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Integrated Ferroelectrics
Publisher: Taylor & Francis Inc.
ISSN: 1058-4587
Official Date: 2006
Dates:
DateEvent
2006Published
23 January 2006Accepted
Volume: 80
Number: 1
Page Range: pp. 77-85
DOI: 10.1080/10584580600656437
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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