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Absorption characteristics of a quantum dot array induced intermediate band: implications for solar cell design

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Tomić, Stanko, Jones, T. S. (Tim S.) and Harrison, Nicholas (Nicholas M.). (2008) Absorption characteristics of a quantum dot array induced intermediate band: implications for solar cell design. Applied Physics Letters, Vol.93 (No.26). p. 263105. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3058716

Abstract

We present a theoretical study of the electronic and absorption properties of the intermediate band (IB) formed by a three dimensional structure of InAs/GaAs quantum dots (QDs) arranged in a periodic array. Analysis of the electronic and absorption structures suggests that the most promising design for an IB solar cell material, which will exhibit its own quasi-Fermi level, is to employ small QDs (~6–12 nm QD lateral size). The use of larger QDs leads to extension of the absorption spectra into a longer wavelength region but does not provide a separate IB in the forbidden energy gap.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Chemistry
Library of Congress Subject Headings (LCSH):	Quantum dots, Indium compounds, Gallium arsenide semiconductors, Fermi surfaces, Solar cells
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	29 December 2008
Volume:	Vol.93
Number:	No.26
Page Range:	p. 263105
Identification Number:	10.1063/1.3058716
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Science and Technology Facilities Council (Great Britain) (STFC)
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URI:	http://wrap.warwick.ac.uk/id/eprint/946