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Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy

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Veal, T. D. (Tim D.), King, Philip David, Hatfield, S. A., Bailey, L. R. (Laura R.), McConville, C. F. (Chris F.), Martel, B., Moreno, J. C., Frayssinet, E., Semond, F. and Zúñiga-Pérez, J.. (2008) Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy. Applied Physics Letters, Vol.93 (No.20). p. 202108. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3032911

Abstract

The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Compound semiconductors, X-ray photoelectron spectroscopy, Heterojunctions, Conduction band, Zinc compounds, Aluminum compounds, Gallium compounds, indium compounds
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	20 November 2008
Volume:	Vol.93
Number:	No.20
Page Range:	p. 202108
Identification Number:	10.1063/1.3032911
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC), France. Agence nationale de la recherche (ANR)
Grant number:	EP/E010210/1 (EPSRC), EP/C535553/1 (EPSRC), EP/E025722/1 (EPSRC)
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URI:	http://wrap.warwick.ac.uk/id/eprint/947