The Library

Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy

Tools

Veal, T. D. (Tim D.), King, Philip David, Hatfield, S. A., Bailey, L. R. (Laura R.), McConville, C. F. (Chris F.), Martel, B., Moreno, J. C., Frayssinet, E., Semond, F. and Zúñiga-Pérez, J.. (2008) Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy. Applied Physics Letters, Vol.93 (No.20). p. 202108. ISSN 0003-6951

Preview

PDF
WRAP_Veal_valence_band.pdf - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (220Kb)

Official URL: http://dx.doi.org/10.1063/1.3032911

Abstract

The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

Item Type:

Journal Article

Subjects:

Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Compound semiconductors, X-ray photoelectron spectroscopy, Heterojunctions, Conduction band, Zinc compounds, Aluminum compounds, Gallium compounds, indium compounds

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

20 November 2008

Dates:

Date	Event
20 November 2008	Published

Volume:

Vol.93

Number:

No.20

Page Range:

p. 202108

Identification Number:

10.1063/1.3032911

Status:

Peer Reviewed

Access rights to Published version:

Open Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC), France. Agence nationale de la recherche (ANR)

Grant number:

EP/E010210/1 (EPSRC), EP/C535553/1 (EPSRC), EP/E025722/1 (EPSRC)

References:

# Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).
# M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech, and M. Kaliteevski, Phys. Rev. B 65, 161205 (2002).
# M. Mihailovic, A. -L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D. A. Buell, F. Semond, C. Morhain, and J. Zuniga-Pérez, “Optical and excitonic properties of ZnO films,” Opt. Mater. (Amsterdam, Neth.) (to be published), doi:10.1016/j.optmat.2007.10.023.
# J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and L. S. Dang, Nature (London) 443, 409 (2006).
# A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nature Mater. 4, 42 (2005).
# Z. P. Wei, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. Yao, B. H. Li, J. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, Appl. Phys. Lett. 90, 042113 (2007).
# C. Bayram, F. Hosseini Teherani, D. J. Rogers, and M. Razeghi, Appl. Phys. Lett. 93, 081111 (2008).
# J. Wu, W. Walukiewicz, K. M. Yu, W. Shan, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, W. K. Metzger, and S. Kurtz, J. Appl. Phys. 94, 6477 (2003a).
# Y. A. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, Appl. Phys. Lett. 83, 2943 (2003).
# D. J. Rogers, F. Hosseini Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, Appl. Phys. Lett. 88, 141918 (2006).
# P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, T. Wang, P. J. Parbrook, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 90, 132105 (2007).
# P. D. C. King, T. D. Veal, C. E. Kendrick, L. R. Bailey, S. M. Durbin, and C. F. McConville, Phys. Rev. B 78, 033308 (2008).
# S. -H. Wei and A. Zunger, Appl. Phys. Lett. 69, 2719 (1996).
# C. G. Van de Walle and J. Neugebauer, Appl. Phys. Lett. 70, 2577 (1997).
# J. Robertson and B. Falabretti, J. Appl. Phys. 100, 014111 (2006).
# W. Mönch, J. Appl. Phys. 80, 5076 (1996).
# R. Zhang, P. Zhang, T. Kang, H. Fan, X. Liu, S. Yang, H. Wei, Q. Zhu, and Z. Wang, Appl. Phys. Lett. 91, 162104 (2007).
# S. -K. Hong, T. Hanada, H. Makino, H. -J. Ko, Y. Chen, A. Tanaka, H. Saski, S. Sato, D. Imai, K. Araki, and M. Shinohara, J. Vac. Sci. Technol. B 19, 1429 (2001).
# W. Mönch, Appl. Phys. Lett. 86, 162101 (2005).
# J. von Pezold and P. D. Bristowe, J. Mater. Sci. 40, 3051 (2005).
# M. W. Wang, J. O. McCaldin, J. F. Swenberg, T. C. McGill, and R. J. Hauenstein, Appl. Phys. Lett. 66, 1974 (1995).
# F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, and J. -P. Faurie, J. Appl. Phys. 90, 5115 (2001).
# F. Semond, Y. Cordier, N. Grandjean, F. Natali, B. Damilano, S. Vézian, and J. Massies, Phys. Status Solidi A 188, 501 (2001).
# S. Tanuma, J. Powell, and D. R. Penn, Surf. Interface Anal. 21, 165 (1993).
# P. D. C. King, T. D. Veal, H. Lu, S. A. Hatfield, W. J. Schaff, and C. F. McConville, Surf. Sci. 602, 871 (2008).
# S. A. Chambers, T. Droubay, T. C. Kaspar, and M. Gutowski, J. Vac. Sci. Technol. B 22, 2205 (2004).
# I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
# S. -H. Wei and A. Zunger, Appl. Phys. Lett. 72, 2011 (1998).
# L. Ley, R. A. Pollak, F. R. McFreely, S. P. Kowalczyk, and D. A. Shirley, Phys. Rev. B 9, 600 (1974).
# P. D. C. King, T. D. Veal, C. F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, J. Schörmann, D. J. As, K. Lischka, H. Lu, and W. J. Schaff, Phys. Rev. B 77, 115213 (2008).
# J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, J. Appl. Phys. 94, 4457 (2003).