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Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy
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Veal, T. D. (Tim D.), King, Philip David, Hatfield, S. A., Bailey, L. R. (Laura R.), McConville, C. F. (Chris F.), Martel, B., Moreno, J. C., Frayssinet, E., Semond, F. and Zúñiga-Pérez, J. (2008) Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy. Applied Physics Letters, Vol.93 (No.20). p. 202108. doi:10.1063/1.3032911
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Official URL: http://dx.doi.org/10.1063/1.3032911
Abstract
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Compound semiconductors, X-ray photoelectron spectroscopy, Heterojunctions, Conduction band, Zinc compounds, Aluminum compounds, Gallium compounds, indium compounds | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 20 November 2008 | ||||
| Dates: |
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| Volume: | Vol.93 | ||||
| Number: | No.20 | ||||
| Page Range: | p. 202108 | ||||
| DOI: | 10.1063/1.3032911 | ||||
| Status: | Peer Reviewed | ||||
| Access rights to Published version: | Open Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), France. Agence nationale de la recherche (ANR) | ||||
| Grant number: | EP/E010210/1 (EPSRC), EP/C535553/1 (EPSRC), EP/E025722/1 (EPSRC) |
Data sourced from Thomson Reuters' Web of Knowledge
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