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Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

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Shah, Vishal Ajit, Dobbie, A. (Andrew), Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John, 1980- and Leadley, D. R. (David R.). (2008) Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19). p. 192103. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3023068

Abstract

An innovative approach is proposed for epitaxial growth of high Ge content, relaxed Si1−xGex buffer layers on a Si(001) substrate. The advantages of the technique are demonstrated by growing such structures via chemical vapor deposition and their characterization. Relaxed Ge is first grown on the substrate followed by the reverse grading approach to reach a final buffer composition of 0.78. The optimized buffer structure is only 2.8 µm thick and demonstrates a low surface threading dislocation density of 4×106 cm−2, with a surface roughness of 2.6 nm. The buffers demonstrate a relaxation of up to 107%.

Item Type:	Journal Article
Subjects:	Q Science > QD Chemistry Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Thin films -- Research, Buffer solutions, Chemical vapor deposition, Dislocations in metals -- Research, Silicon compounds, Germanium compounds, Surfaces, Deformation of
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	10 November 2008
Volume:	Vol.93
Number:	No.19
Page Range:	p. 192103
Identification Number:	10.1063/1.3023068
Status:	Peer Reviewed
Access rights to Published version:	Open Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/948