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Characterization of n-n Ge/SiC heterojunction diodes

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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E. (Susan E.), Wilson, Neil R., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2987421

Abstract

In this paper we investigate the physical and electrical properties of germanium deposited on 4H silicon carbide substrates by molecular beam epitaxy. Layers of highly doped and intrinsic germanium were deposited at 300 and 500 °C and compared. Current-voltage measurements reveal low turn-on voltages. The intrinsic samples display ideality factors of 1.1 and a reverse leakage current of 9×10−9 A/cm2, suggesting a high quality electrical interface. X-ray diffraction analysis reveals the polycrystalline nature of the high-temperature depositions, whereas the low-temperature depositions are amorphous. Atomic force microscopy shows that the low-temperature layers have a rms roughness of 3 nm.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Engineering Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Metal oxide semiconductors, Silicon carbide, Semiconductors -- Junctions, Heterojunctions, Germanium compounds
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	16 September 2008
Volume:	Vol.93
Number:	No.11
Number of Pages:	3
Page Range:	Article: 112104
Identification Number:	10.1063/1.2987421
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Open Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/949