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Characterization of n-n Ge/SiC heterojunction diodes
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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A. and Mawby, P. A. (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. doi:10.1063/1.2987421
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Official URL: http://dx.doi.org/10.1063/1.2987421
Abstract
In this paper we investigate the physical and electrical properties of germanium deposited on 4H silicon carbide substrates by molecular beam epitaxy. Layers of highly doped and intrinsic germanium were deposited at 300 and 500 °C and compared. Current-voltage measurements reveal low turn-on voltages. The intrinsic samples display ideality factors of 1.1 and a reverse leakage current of 9×10−9 A/cm2, suggesting a high quality electrical interface. X-ray diffraction analysis reveals the polycrystalline nature of the high-temperature depositions, whereas the low-temperature depositions are amorphous. Atomic force microscopy shows that the low-temperature layers have a rms roughness of 3 nm.
| Item Type: | Journal Article | ||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductors, Silicon carbide, Semiconductors -- Junctions, Heterojunctions, Germanium compounds | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 16 September 2008 | ||||
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| Volume: | Vol.93 | ||||
| Number: | No.11 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | Article: 112104 | ||||
| DOI: | 10.1063/1.2987421 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Open Access |
Data sourced from Thomson Reuters' Web of Knowledge
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