The Library

Characterization of n-n Ge/SiC heterojunction diodes

Tools

Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A. and Mawby, P. A.. (2008) Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11). Article: 112104. ISSN 0003-6951

Text
WRAP_Gammon_Characterization_nnge.pdf - Draft Version
Restricted to Repository staff only
Download (306Kb)

Official URL: http://dx.doi.org/10.1063/1.2987421

Abstract

In this paper we investigate the physical and electrical properties of germanium deposited on 4H silicon carbide substrates by molecular beam epitaxy. Layers of highly doped and intrinsic germanium were deposited at 300 and 500 °C and compared. Current-voltage measurements reveal low turn-on voltages. The intrinsic samples display ideality factors of 1.1 and a reverse leakage current of 9×10−9 A/cm2, suggesting a high quality electrical interface. X-ray diffraction analysis reveals the polycrystalline nature of the high-temperature depositions, whereas the low-temperature depositions are amorphous. Atomic force microscopy shows that the low-temperature layers have a rms roughness of 3 nm.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Engineering
Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Metal oxide semiconductors, Silicon carbide, Semiconductors -- Junctions, Heterojunctions, Germanium compounds

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

16 September 2008

Dates:

Date	Event
16 September 2008	Published

Volume:

Vol.93

Number:

No.11

Number of Pages:

Page Range:

Article: 112104

Identification Number:

10.1063/1.2987421

Status:

Peer Reviewed

Publication Status:

Published

Access rights to Published version:

Open Access

References:

1A. Agarwal, R. Singh, S.-H. Ryu, J. Richmond, C. Capell, S. Schwab, B.
Moore, and J. Palmour, www.cree.com.
2A. Pérez-Tomás, M. R. Jennings, P. M. Gammon, G. J. Roberts, P. A.
Mawby, J. Millán, P. Godignon, J. Montserrat, and N. Mestres, Microelectron.
Eng. 85, 4704 2008.
3A. Pérez-Tomás, M. R. Jennings, M. Davis, J. A. Covington, P. A. Mawby,
V. Shah, and T. Grasby, J. Appl. Phys. 102, 014505 2007.
4S. M. Sze, Physics of Semiconductor Devices Wiley, New York, 1981.
5R. J. H. Morris, D. R. Leadley, R. Hammond, T. J. Grasby, T. E. Whall,
and E. H. C. Parker, J. Appl. Phys. 96, 6470 2004.
6W. Kern, and D. A. Poutinen, RCA Rev. 31, 187 1970.
7W. T. Anderson, A. Christou, and J. E. Davey, IEEE J. Solid-State Circuits
SC13, 4430 1978.
8K. L. Chopra and S. K. Bahl, Phys. Rev. B 1, 2545 1970.
9V. Alberts, J. H. Neethling, and J. S. Vermaak, J. Mater. Sci. 3, 240
1992.
10K.-N. Tu, J. W. Mayer and L. C. Feldman, Electronic Thin Film Science
Macmillan, New York, 1992.
11M. Copel, M. C. Reuter, M. Horn von Hoegen, and R. M. Tromp, Phys.
Rev. B 42, 11682 1990.
12D. K. Schroder, Semiconductor Material and Device Characterization
Wiley, New York, 1998, p. 158.
13R. T. Tung, Phys. Rev. B 45, 13509 1992.