King, Philip David, Veal, T. D., Adikimenakis, A., Lu, H., Bailey, L. R., Iliopoulos, E., Georgakilas, A., Schaff, William Joseph and McConville, C. F. (2008) Surface electronic properties of undoped InAlN alloys. Applied Physics Letters, Vol.92 (No.17). p. 172105. doi:10.1063/1.2913765 ISSN 0003-6951.

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Abstract

The variation in surface electronic properties of undoped c-plane InxAl1−xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Hall effect, Compound semiconductors, Aluminum compounds, Indium compounds, Nitrogen compounds
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	1 May 2008
Dates:	Date Event 1 May 2008 Published
Volume:	Vol.92
Number:	No.17
Page Range:	p. 172105
DOI:	10.1063/1.2913765
Status:	Peer Reviewed
Access rights to Published version:	Open Access (Creative Commons)
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EP/C535553/1 (EPSRC), EP/E025722/1 (EPSRC)

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