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Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates

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Sivadasan, Vineet, Leadley, D. R. (David R.) and Myronov, Maksym (2018) Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates. Semiconductor Science and Technology, 33 (2). 024002. doi:10.1088/1361-6641/aaa329

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Official URL: https://doi.org/10.1088/1361-6641/aaa329

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Abstract

Formation of Kirkendall voids is demonstrated in the Ge underlayer of reverse step graded Si1−xGex/Ge buffer layers grown on Si(001) using reduced pressure chemical vapour deposition (RP-CVD). This phenomenon is seen when the constant composition Si1−xGex layer is grown at high temperatures and for x ≤ 0.7. The density and size of the spherical voids can be tuned by changing Ge content in the Si1−xGex and other growth parameters.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Semiconductor Science and Technology
Publisher: Institute of Physics Publishing Ltd.
ISSN: 0268-1242
Official Date: 18 January 2018
Dates:
DateEvent
18 January 2018Published
20 December 2017Available
20 December 2017Accepted
Volume: 33
Number: 2
Article Number: 024002
DOI: 10.1088/1361-6641/aaa329
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/J001074Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
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