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Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates
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Sivadasan, Vineet, Leadley, D. R. (David R.) and Myronov, Maksym (2018) Kirkendall void formation in reverse step graded Si1−xGex/Ge/Si(001) virtual substrates. Semiconductor Science and Technology, 33 (2). 024002. doi:10.1088/1361-6641/aaa329
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Official URL: https://doi.org/10.1088/1361-6641/aaa329
Abstract
Formation of Kirkendall voids is demonstrated in the Ge underlayer of reverse step graded Si1−xGex/Ge buffer layers grown on Si(001) using reduced pressure chemical vapour deposition (RP-CVD). This phenomenon is seen when the constant composition Si1−xGex layer is grown at high temperatures and for x ≤ 0.7. The density and size of the spherical voids can be tuned by changing Ge content in the Si1−xGex and other growth parameters.
| Item Type: | Journal Article | ||||||||
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| Divisions: | Faculty of Science > Physics | ||||||||
| Journal or Publication Title: | Semiconductor Science and Technology | ||||||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||||||
| ISSN: | 0268-1242 | ||||||||
| Official Date: | 18 January 2018 | ||||||||
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| Volume: | 33 | ||||||||
| Number: | 2 | ||||||||
| Article Number: | 024002 | ||||||||
| DOI: | 10.1088/1361-6641/aaa329 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Open Access | ||||||||
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