Jefferson, Paul Harvey, Hatfield, S. A., Veal, T. D. (Tim D.), King, Philip David, McConville, C. F. (Chris F.), Zúñiga-Pérez, J. and Muñoz-Sanjosé, V. (2008) Bandgap and effective mass of epitaxial cadmium oxide. Applied Physics Letters, Vol.92 (No.2). 022101. doi:10.1063/1.2833269

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Abstract

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16±0.02 eV and 0.21±0.01m0 respectively.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Cadmium compounds, Hall effect, Epitaxy, Ultraviolet spectra, Infrared spectra, Energy gap (Physics)
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	14 January 2008
Dates:	Date Event 14 January 2008 Published
Volume:	Vol.92
Number:	No.2
Page Range:	022101
DOI:	10.1063/1.2833269
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EP/E010210/1 (EPSRC)

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