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Bandgap and effective mass of epitaxial cadmium oxide

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Jefferson, Paul Harvey, Hatfield, S. A., Veal, T. D. (Tim D.), King, Philip David, McConville, C. F. (Chris F.), Zúñiga-Pérez, J. and Muñoz-Sanjosé, V.. (2008) Bandgap and effective mass of epitaxial cadmium oxide. Applied Physics Letters, Vol.92 (No.2). 022101. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2833269

Abstract

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16±0.02 eV and 0.21±0.01m0 respectively.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Cadmium compounds, Hall effect, Epitaxy, Ultraviolet spectra, Infrared spectra, Energy gap (Physics)

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

14 January 2008

Dates:

Date	Event
14 January 2008	Published

Volume:

Vol.92

Number:

No.2

Page Range:

022101

Identification Number:

10.1063/1.2833269

Status:

Peer Reviewed

Access rights to Published version:

Open Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

Grant number:

EP/E010210/1 (EPSRC)

References:

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URI:

http://wrap.warwick.ac.uk/id/eprint/966

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