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Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors
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Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, Brice, Nicholas, Gareth, Zimmerman, Paul, Meuris, Marc, Szostak, Slawomir, Gluszko, Grzegorz and Lukasiak, Lidia (2007) Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, Vol.91 (No.26). p. 263512. doi:10.1063/1.2828134 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2828134
Abstract
Effective mobility measurements have been made at 4.2 K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.
| Item Type: | Journal Article | ||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Hafnium compounds, Germanium compounds, Semiconductor films, Annealing of metals, Electron mobility | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 27 December 2007 | ||||
| Dates: |
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| Volume: | Vol.91 | ||||
| Number: | No.26 | ||||
| Page Range: | p. 263512 | ||||
| DOI: | 10.1063/1.2828134 | ||||
| Status: | Peer Reviewed | ||||
| Access rights to Published version: | Open Access (Creative Commons) |
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