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Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

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Beer, C. (Chris), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), De Jaeger, Brice, Nicholas, Gareth, Zimmerman, Paul, Meuris, Marc, Szostak, Slawomir, Gluszko, Grzegorz and Lukasiak, Lidia. (2007) Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, Vol.91 (No.26). p. 263512. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2828134

Abstract

Effective mobility measurements have been made at 4.2 K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Hafnium compounds, Germanium compounds, Semiconductor films, Annealing of metals, Electron mobility
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	27 December 2007
Volume:	Vol.91
Number:	No.26
Page Range:	p. 263512
Identification Number:	10.1063/1.2828134
Status:	Peer Reviewed
Access rights to Published version:	Open Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/967