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Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1-xGex films
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UNSPECIFIED (2003) Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1-xGex films. In: 3rd International Conference on Porous Semiconductors: Science and Technology (PSST 2002), TENERIFE, SPAIN, MAR 10-15, 2002. Published in: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 197 (1). pp. 263-268. doi:10.1002/pssa.200306512 ISSN 0031-8965.
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Official URL: http://dx.doi.org/10.1002/pssa.200306512
Abstract
The structure of porous Si1-xGex films was characterized using Raman spectroscopy. As the film porosity increases the sizes of Si1-xGex nanocrystals decrease, and also the film composition slightly modifies in favor of Ge. The Si1-xGex nanocrystals were estimated to be 12.0 rim, 16.1 DID and 19.3 nm average diameter in three porous samples prepared from undoped Si0.87Ge0.13 films with 20 min, 10 min and 2 min etch times, respectively, at the same current density 22 mA cm(-2). The final Ge fractions were determined for the samples as 17.4%, 14.5% and 13.0%, respectively. It is seen by this study that Raman spectroscopy is, as it has always been for bulk Si1-xGex alloys, a very useful technique for characterizing the structure of porous Si1-xGex films.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | ||||
Publisher: | WILEY-V C H VERLAG GMBH | ||||
ISSN: | 0031-8965 | ||||
Official Date: | May 2003 | ||||
Dates: |
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Volume: | 197 | ||||
Number: | 1 | ||||
Number of Pages: | 6 | ||||
Page Range: | pp. 263-268 | ||||
DOI: | 10.1002/pssa.200306512 | ||||
Publication Status: | Published | ||||
Title of Event: | 3rd International Conference on Porous Semiconductors: Science and Technology (PSST 2002) | ||||
Location of Event: | TENERIFE, SPAIN | ||||
Date(s) of Event: | MAR 10-15, 2002 |
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