Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1-xGex films
UNSPECIFIED (2003) Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1-xGex films. In: 3rd International Conference on Porous Semiconductors: Science and Technology (PSST 2002), TENERIFE, SPAIN, MAR 10-15, 2002. Published in: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 197 (1). pp. 263-268.Full text not available from this repository.
Official URL: http://dx.doi.org/10.1002/pssa.200306512
The structure of porous Si1-xGex films was characterized using Raman spectroscopy. As the film porosity increases the sizes of Si1-xGex nanocrystals decrease, and also the film composition slightly modifies in favor of Ge. The Si1-xGex nanocrystals were estimated to be 12.0 rim, 16.1 DID and 19.3 nm average diameter in three porous samples prepared from undoped Si0.87Ge0.13 films with 20 min, 10 min and 2 min etch times, respectively, at the same current density 22 mA cm(-2). The final Ge fractions were determined for the samples as 17.4%, 14.5% and 13.0%, respectively. It is seen by this study that Raman spectroscopy is, as it has always been for bulk Si1-xGex alloys, a very useful technique for characterizing the structure of porous Si1-xGex films.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||PHYSICA STATUS SOLIDI A-APPLIED RESEARCH|
|Publisher:||WILEY-V C H VERLAG GMBH|
|Official Date:||May 2003|
|Number of Pages:||6|
|Page Range:||pp. 263-268|
|Title of Event:||3rd International Conference on Porous Semiconductors: Science and Technology (PSST 2002)|
|Location of Event:||TENERIFE, SPAIN|
|Date(s) of Event:||MAR 10-15, 2002|
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