UNSPECIFIED (2003) Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1-xGex films. In: 3rd International Conference on Porous Semiconductors: Science and Technology (PSST 2002), TENERIFE, SPAIN, MAR 10-15, 2002. Published in: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 197 (1). pp. 263-268.

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Abstract

The structure of porous Si1-xGex films was characterized using Raman spectroscopy. As the film porosity increases the sizes of Si1-xGex nanocrystals decrease, and also the film composition slightly modifies in favor of Ge. The Si1-xGex nanocrystals were estimated to be 12.0 rim, 16.1 DID and 19.3 nm average diameter in three porous samples prepared from undoped Si0.87Ge0.13 films with 20 min, 10 min and 2 min etch times, respectively, at the same current density 22 mA cm(-2). The final Ge fractions were determined for the samples as 17.4%, 14.5% and 13.0%, respectively. It is seen by this study that Raman spectroscopy is, as it has always been for bulk Si1-xGex alloys, a very useful technique for characterizing the structure of porous Si1-xGex films.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
Publisher:	WILEY-V C H VERLAG GMBH
ISSN:	0031-8965
Date:	May 2003
Volume:	197
Number:	1
Number of Pages:	6
Page Range:	pp. 263-268
Identification Number:	10.1002/pssa.200306512
Publication Status:	Published
Title of Event:	3rd International Conference on Porous Semiconductors: Science and Technology (PSST 2002)
Location of Event:	TENERIFE, SPAIN
Date(s) of Event:	MAR 10-15, 2002
URI:	http://wrap.warwick.ac.uk/id/eprint/9689

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