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Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
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King, Philip David, Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Fuchs, Frank, Furthmüller, Jürgen, Bechstedt, Friedhelm, Schley, P., Goldhahn, R., Schörmann, J., As, D. J., Lischka, K., Muto, D., Naoi, H., Nanishi, Y., Lu, H. (Hai) and Schaff, William Joseph, 1956-. (2007) Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces. Applied Physics Letters, Vol.91 (No.9). 092101. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2775807
Abstract
Electron accumulation is found to occur at the surface of wurtzite (112¯0), (0001), and (0001¯) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Г-point conduction band minimum lying significantly below the charge neutrality level.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Indium compounds, X-ray photoelectron spectroscopy, Conduction band, Semiconductors, Wide gap semiconductors |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 27 August 2007 |
| Volume: | Vol.91 |
| Number: | No.9 |
| Page Range: | 092101 |
| Identification Number: | 10.1063/1.2775807 |
| Status: | Peer Reviewed |
| Access rights to Published version: | Open Access |
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Deutsche Forschungsgemeinschaft (DFG) |
| Grant number: | EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC), Be1346/18-2 (DFG) |
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| URI: | http://wrap.warwick.ac.uk/id/eprint/970 |
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