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Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

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King, Philip David, Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Fuchs, Frank, Furthmüller, Jürgen, Bechstedt, Friedhelm, Schley, P., Goldhahn, R., Schörmann, J., As, D. J., Lischka, K., Muto, D., Naoi, H., Nanishi, Y., Lu, H. (Hai) and Schaff, William Joseph, 1956-. (2007) Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces. Applied Physics Letters, Vol.91 (No.9). 092101. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2775807

Abstract

Electron accumulation is found to occur at the surface of wurtzite (112¯0), (0001), and (0001¯) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Г-point conduction band minimum lying significantly below the charge neutrality level.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Indium compounds, X-ray photoelectron spectroscopy, Conduction band, Semiconductors, Wide gap semiconductors
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Date: 27 August 2007
Volume: Vol.91
Number: No.9
Page Range: 092101
Identification Number: 10.1063/1.2775807
Status: Peer Reviewed
Access rights to Published version: Open Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Deutsche Forschungsgemeinschaft (DFG)
Grant number: EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC), Be1346/18-2 (DFG)
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URI: http://wrap.warwick.ac.uk/id/eprint/970

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