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Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy

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King, Philip David, Veal, T. D., Jefferson, Paul Harvey, McConville, C. F., Wang, Tao, Parbrook, P. J., Lu, H. and Schaff, William Joseph. (2007) Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy. Applied Physics Letters, Vol.90 (No.13). p. 132105. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2716994

Abstract

The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52±0.17 eV. Together with the resulting conduction band offset of 4.0±0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

X-ray photoelectron spectroscopy, Indium compounds, Aluminum compounds, Semiconductors -- Junctions, Conduction band

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

27 March 2007

Dates:

Date	Event
27 March 2007	Published

Volume:

Vol.90

Number:

No.13

Page Range:

p. 132105

Identification Number:

10.1063/1.2716994

Status:

Peer Reviewed

Access rights to Published version:

Open Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

Grant number:

EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC)

References:

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