The Library
Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy
Tools
King, Philip David, Veal, T. D., Jefferson, Paul Harvey, McConville, C. F., Wang, Tao, Parbrook, P. J., Lu, H. and Schaff, William Joseph (2007) Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy. Applied Physics Letters, Vol.90 (No.13). p. 132105. doi:10.1063/1.2716994 ISSN 0003-6951.
|
PDF
WRAP_King_Valance_INN_AIN.pdf - Requires a PDF viewer. Download (102Kb) |
Official URL: http://dx.doi.org/10.1063/1.2716994
Abstract
The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52±0.17 eV. Together with the resulting conduction band offset of 4.0±0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | X-ray photoelectron spectroscopy, Indium compounds, Aluminum compounds, Semiconductors -- Junctions, Conduction band | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 27 March 2007 | ||||
Dates: |
|
||||
Volume: | Vol.90 | ||||
Number: | No.13 | ||||
Page Range: | p. 132105 | ||||
DOI: | 10.1063/1.2716994 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC) |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |
Downloads
Downloads per month over past year