King, Philip David, Veal, T. D., Jefferson, Paul Harvey, McConville, C. F., Wang, Tao, Parbrook, P. J., Lu, H. and Schaff, William Joseph (2007) Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy. Applied Physics Letters, Vol.90 (No.13). p. 132105. doi:10.1063/1.2716994

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Abstract

The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52±0.17 eV. Together with the resulting conduction band offset of 4.0±0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	X-ray photoelectron spectroscopy, Indium compounds, Aluminum compounds, Semiconductors -- Junctions, Conduction band
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	27 March 2007
Dates:	Date Event 27 March 2007 Published
Volume:	Vol.90
Number:	No.13
Page Range:	p. 132105
DOI:	10.1063/1.2716994
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC)

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