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Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy

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King, Philip David, Veal, T. D. (Tim D.), Jefferson, Paul Harvey, McConville, C. F. (Chris F.), Wang, Tao, Dr., Parbrook, P. J., Lu, H. (Hai) and Schaff, William Joseph, 1956-. (2007) Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy. Applied Physics Letters, Vol.90 (No.13). p. 132105. ISSN 0003-6951

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Abstract

The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52±0.17 eV. Together with the resulting conduction band offset of 4.0±0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): X-ray photoelectron spectroscopy, Indium compounds, Aluminum compounds, Semiconductors -- Junctions, Conduction band
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 27 March 2007
Volume: Vol.90
Number: No.13
Page Range: p. 132105
Identification Number: 10.1063/1.2716994
Status: Peer Reviewed
Access rights to Published version: Open Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/C535553/1 (EPSRC), GR/S14252/01 (EPSRC)
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URI: http://wrap.warwick.ac.uk/id/eprint/972

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