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Failure and reliability analysis of a SiC power module based on stress comparison to a Si device

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Hu, Borong, Ortiz Gonzalez, Jose Angel, Ran, Li, Ren, Hai, Zeng, Zheng, Lai, Wei, Gao, Bing, Alatise, Olayiwola M., Lu, Hua, Bailey, Christopher and Mawby, P. A. (Philip A.) (2017) Failure and reliability analysis of a SiC power module based on stress comparison to a Si device. IEEE Transactions on Device and Materials Reliability, 17 (4). pp. 727-737. doi:10.1109/TDMR.2017.2766692 ISSN 1530-4388.

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Official URL: http://doi.org/10.1109/TDMR.2017.2766692

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Abstract

The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless, the reliability of SiC power modules has been identified as a major area of uncertainty in applications which require high reliability. Traditional power module packaging methods developed for silicon chips have been adopted for SiC and the different thermomechanical properties cause different fatigue stresses on the solder layer of the chip. In this paper a 2-D Finite Element (FE) model has been developed to evaluate the stress performance and lifetime of the solder layer for Si devices, which has been validated using accelerated power cycling tests on Si IGBTs. The proposed model was extrapolated for SiC devices of the same voltage and current rating using the same solder material and the results show that under the same cyclic power loss profile the induced stress and strain energy in the die attach layer is much higher and concentrates on the die/solder interfacial area for SiC chips. Using the validated stress-based model, the lifetime can be quantified when SiC chips are used. This ability to extrapolate the available power cycling and lifetime data of silicon chips to silicon carbide chips would be a key element for developing reliable packaging methods for SiC devices.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Integrated circuits, Silicon carbide, Finite element method
Journal or Publication Title: IEEE Transactions on Device and Materials Reliability
Publisher: IEEE
ISSN: 1530-4388
Official Date: 26 October 2017
Dates:
DateEvent
26 October 2017Published
16 October 2017Accepted
21 August 2017Submitted
Volume: 17
Number: 4
Page Range: pp. 727-737
DOI: 10.1109/TDMR.2017.2766692
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Copyright Holders: IEEE
Date of first compliant deposit: 10 January 2018
Date of first compliant Open Access: 10 January 2018
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
51607016National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809
EP/K036327/1 Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/K034804/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
UNSPECIFIEDNational Key Technology R&D Program of ChinaUNSPECIFIED
UNSPECIFIEDGraduate Scientific Research and Innovation Foundation of ChongqingUNSPECIFIED

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