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Failure and reliability analysis of a SiC power module based on stress comparison to a Si device
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Hu, Borong, Ortiz Gonzalez, Jose Angel, Ran, Li, Ren, Hai, Zeng, Zheng, Lai, Wei, Gao, Bing, Alatise, Olayiwola M., Lu, Hua, Bailey, Christopher and Mawby, P. A. (Philip A.) (2017) Failure and reliability analysis of a SiC power module based on stress comparison to a Si device. IEEE Transactions on Device and Materials Reliability, 17 (4). pp. 727-737. doi:10.1109/TDMR.2017.2766692 ISSN 1530-4388.
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WRAP-failure-reliability-analysis-power-module-stress-device-Hu-2017.pdf - Accepted Version - Requires a PDF viewer. Download (2051Kb) | Preview |
Official URL: http://doi.org/10.1109/TDMR.2017.2766692
Abstract
The superior electro-thermal properties of SiC power devices permit higher temperature of operation and enable higher power density compared with silicon devices. Nevertheless, the reliability of SiC power modules has been identified as a major area of uncertainty in applications which require high reliability. Traditional power module packaging methods developed for silicon chips have been adopted for SiC and the different thermomechanical properties cause different fatigue stresses on the solder layer of the chip. In this paper a 2-D Finite Element (FE) model has been developed to evaluate the stress performance and lifetime of the solder layer for Si devices, which has been validated using accelerated power cycling tests on Si IGBTs. The proposed model was extrapolated for SiC devices of the same voltage and current rating using the same solder material and the results show that under the same cyclic power loss profile the induced stress and strain energy in the die attach layer is much higher and concentrates on the die/solder interfacial area for SiC chips. Using the validated stress-based model, the lifetime can be quantified when SiC chips are used. This ability to extrapolate the available power cycling and lifetime data of silicon chips to silicon carbide chips would be a key element for developing reliable packaging methods for SiC devices.
| Item Type: | Journal Article | ||||||||||||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||||||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||||||||
| Library of Congress Subject Headings (LCSH): | Integrated circuits, Silicon carbide, Finite element method | ||||||||||||||||||
| Journal or Publication Title: | IEEE Transactions on Device and Materials Reliability | ||||||||||||||||||
| Publisher: | IEEE | ||||||||||||||||||
| ISSN: | 1530-4388 | ||||||||||||||||||
| Official Date: | 26 October 2017 | ||||||||||||||||||
| Dates: |
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| Volume: | 17 | ||||||||||||||||||
| Number: | 4 | ||||||||||||||||||
| Page Range: | pp. 727-737 | ||||||||||||||||||
| DOI: | 10.1109/TDMR.2017.2766692 | ||||||||||||||||||
| Status: | Peer Reviewed | ||||||||||||||||||
| Publication Status: | Published | ||||||||||||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||||||||||||
| Copyright Holders: | IEEE | ||||||||||||||||||
| Date of first compliant deposit: | 10 January 2018 | ||||||||||||||||||
| Date of first compliant Open Access: | 10 January 2018 | ||||||||||||||||||
| RIOXX Funder/Project Grant: |
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