Veal, T. D. (Tim D.), Jefferson, Paul Harvey, Piper, L. F. J., McConville, C. F. (Chris F.), Joyce, T. B., Chalker, P. R., Considine, L., Lu, H. (Hai) and Schaff, William Joseph, 1956-. (2006) Transition from electron accumulation to depletion at InGaN surfaces. Applied Physics Letters, Vol.89 (No.20). p. 202110. ISSN 0003-6951

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Abstract

The composition dependence of the Fermi-level pinning at the oxidized (0001) surfaces of n-type InxGa1−xN films (0<=x<=1) is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum (CBM) at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x=0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Indium compounds, Gallium compounds, Wide gap semiconductors, Semiconductor films, Fermi surfaces, X-ray photoelectron spectroscopy, Conduction band, Stoichiometry
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	14 November 2006
Volume:	Vol.89
Number:	No.20
Page Range:	p. 202110
Identification Number:	10.1063/1.2387976
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	GR/S14252/01 (EPSRC), EP/C535553/01 (EPSRC)
References:	# Hai Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 82, 1736 (2003). # I. Mahboob, T. D. Veal, C. F. McConville, Hai Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 036804 (2004). # C. A. Mead and W. G. Spitzer, Phys. Rev. 134, A713 (1964). # K. Kajiyama, Y. Mizushima, and S. Sakata, Appl. Phys. Lett. 23, 458 (1973). # H. Luth, Phys. Status Solidi A 187, 33 (2001). # G. Margaritondo, Rep. Prog. Phys. 62, 765 (1999). # V. M. Bermudez, T. M. Jung, K. Doverspike, and A. E. Wickenden, J. Appl. Phys. 79, 101 (1996). # L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, Hai Lu, and W. J. Schaff, J. Vac. Sci. Technol. A 23, 617 (2005). # Hai Lu, W. J. Schaff, and L. F. Eastman, J. Appl. Phys. 96, 3577 (2004). # W. J. Schaff, Hai Lu, L. F. Eastman, W. Walukiewicz, K. M. Yu, S. Keller, S. Kurtz, B. Keyes, and L. Gevilas, in State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V, The Electrochemical Society Proceedings Series, Honolulu, Hawaii, 3–8 October 2004, edited by H. M. Ng and A. G. Baca (Electrochemical Society, Pennington, NJ, 2004), Vol. 2004–06, pp. 358–371. # S. A. Chambers, T. Droubay, T. C. Kaspar, and M. Gutowski, J. Vac. Sci. Technol. B 22, 2205 (2004). # K. A. Rickert, A. B. Ellis, F. J. Himpsel, Hai Lu, W. Schaff, J. M. Redwing, F. Dwikusuma, and T. F. Kuech, Appl. Phys. Lett. 82, 3254 (2003). # V. Cimalla, M. Niebelschütz, G. Ecke, V. Lebedev, O. Ambacher, M. Himmerlich, S. Krischok, J. A. Schaefer, Hai Lu, and W. J. Schaff, Phys. Status Solidi A 203, 59 (2006). # J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and W. J. Schaff, Appl. Phys. Lett. 80, 4741 (2002). # S.-J. Cho, S. Dogan, S. Sabuktagin, M. A. Reshchikov, D. K. Johnstone, and H. Morkoc, Appl. Phys. Lett. 84, 3070 (2004). # T. U. Kampen and W. Mönch, Appl. Surf. Sci. 117/118, 388 (1997). # W. Mönch, J. Appl. Phys. 80, 5076 (1996). # S. X. Li, K. M. Yu, J. Wu, R. E. Jones, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller, Hai Lu, and W. J. Schaff, Physica B 376–377, 432 (2006). # J. Robertson and B. Falabretti, J. Appl. Phys. 100, 014111 (2006). # G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996). # I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003). # C-F. Shih, N-C. Chen, P-H. Chang, and K-S. Liu, Jpn. J. Appl. Phys., Part 1 44, 7892 (2005). # S.-H. Wei and A. Zunger, Appl. Phys. Lett. 69, 2719 (1996). # W. Mönch, Electronic Properties of Semiconductor Interfaces (Springer, Berlin, 2004), pp. 107–134. # L. F. J. Piper, T. D. Veal, I. Mahboob, C. F. McConville, Hai Lu, and W. J. Schaff, Phys. Rev. B 70, 115333 (2004).
URI:	http://wrap.warwick.ac.uk/id/eprint/974

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