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Band anticrossing in GaNxSb1–x

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Jefferson, Paul Harvey, Veal, T. D. (Tim D.), Piper, L. F. J., Bennett, B. R., McConville, C. F. (Chris F.), Murdin, B. N., Buckle, L., Smith, G. W. and Ashley, T.. (2006) Band anticrossing in GaNxSb1–x. Applied Physics Letters, Vol.89 (No.11). p. 111921. ISSN Band anticrossing in GaNxSb1–x

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Official URL: http://dx.doi.org/10.1063/1.2349832

Abstract

Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E– and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k·p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Gallium compounds, Semiconductors, Fourier transform spectroscopy, Fourier transform infrared spectroscopy, Conduction band
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	Band anticrossing in GaNxSb1–x
Date:	15 September 2006
Volume:	Vol.89
Number:	No.11
Page Range:	p. 111921
Identification Number:	10.1063/1.2349832
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	GR/R82630/01 (EPSRC), GR/S56030/01 (EPSRC)
References:	# Dilute Nitride Semiconductors, edited by M. Henini (Elsevier, New York, 2005). # W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999). # J. N. Baillargeon, P. J. Pearah, K. Y. Cheng, G. E. Hofler, and K. C. Hsieh, J. Vac. Sci. Technol. B 10, 829 (1992). # M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys., Part 2 31, L853 (1992). # T. D. Veal, L. F. J. Piper, P. H. Jefferson, I. Mahboob, C. F. McConville, M. Merrick, T. J. C. Hosea, B. N. Murdin, and M. Hopkinson, Appl. Phys. Lett. 87, 182114 (2005). # T. D. Veal, L. F. J. Piper, S. Jollands, B. R. Bennett, P. H. Jefferson, P. A. Thomas, C. F. McConville, B. N. Murdin, L. Buckle, G. W. Smith, and T. Ashley, Appl. Phys. Lett. 87, 132101 (2005). # H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, Jr., M.-J. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, J. Appl. Phys. 97, 113510 (2005). # J.-C. Harmand, A. Caliman, E. V. K. Rao, L. Largeau, J. Ramos, R. Teissier, L. Travers, G. Ungaro, B. Theys, and I. F. L. Dias, Semicond. Sci. Technol. 17, 778 (2002). # I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003). # L. Buckle, B. R. Bennett, S. Jollands, T. D. Veal, N. R. Wilson, B. N. Murdin, C. F. McConville, and T. Ashley, J. Cryst. Growth 278, 188 (2005). # P. Perlin, P. Wisniewski, C. Skierbiszewski, Y. Suski, E. Kaminska, S. G. Subramanya, E. R. Weber, D. E. Mars, and W. Walukiewicz, Appl. Phys. Lett. 76, 1279 (2000). # C. R. Pidgeon and R. N. Brown, Phys. Rev. 146, 575 (1966). # I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001). # P. S. Dutta, H. L. Bhat, and V. Kumar, J. Appl. Phys. 81, 5821 (1997). # S. C. Jain, J. M. McGregor, and D. J. Roulston, J. Appl. Phys. 68, 3747 (1990). # J. I. Pankove, Phys. Rev. 140, A2059 (1965). # J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971). # A. Lindsay and E. P. O'Reilly (private communication), GaNSb band parameters for five-band k·p, model from tight-binding calculations.
URI:	http://wrap.warwick.ac.uk/id/eprint/976