Piper, L. F. J., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Lu, H. (Hai) and Schaff, William Joseph, 1956-. (2006) Origin of the n-type conductivity of InN: the role of positively charged dislocations. Applied Physics Letters, Vol.88 (No.25). p. 252109. ISSN 0003-6951

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Abstract

As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm–3) with increasing film thickness (from 50 to 12 000 nm). The combination of background donors from impurities and the extreme electron accumulation at InN surfaces is shown to be insufficient to reproduce the measured film thickness dependence of the free-electron density. When positively charged nitrogen vacancies (V_N⁺) along dislocations are also included, agreement is obtained between the calculated and experimental thickness dependence of the free-electron concentration.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Indium compounds, Wide gap semiconductors, Hall effect, Dislocations in metals, Electric conductivity
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	21 June 2006
Volume:	Vol.88
Number:	No.25
Page Range:	p. 252109
Identification Number:	10.1063/1.2214156
Status:	Peer Reviewed
Access rights to Published version:	Open Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/977

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