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Origin of the n-type conductivity of InN: the role of positively charged dislocations
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Piper, L. F. J., Veal, T. D., McConville, C. F., Lu, H. and Schaff, William Joseph (2006) Origin of the n-type conductivity of InN: the role of positively charged dislocations. Applied Physics Letters, Vol.88 (No.25). p. 252109. doi:10.1063/1.2214156 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2214156
Abstract
As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm–3) with increasing film thickness (from 50 to 12 000 nm). The combination of background donors from impurities and the extreme electron accumulation at InN surfaces is shown to be insufficient to reproduce the measured film thickness dependence of the free-electron density. When positively charged nitrogen vacancies (V<sub>N</sub><sup>+</sup>) along dislocations are also included, agreement is obtained between the calculated and experimental thickness dependence of the free-electron concentration.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Indium compounds, Wide gap semiconductors, Hall effect, Dislocations in metals, Electric conductivity | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 21 June 2006 | ||||
Dates: |
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Volume: | Vol.88 | ||||
Number: | No.25 | ||||
Page Range: | p. 252109 | ||||
DOI: | 10.1063/1.2214156 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) |
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