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Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2017) Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs. Microelectronics Reliability, 76-77 . pp. 470-474. doi:10.1016/j.microrel.2017.06.082 ISSN 0026-2714.

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Official URL: http://dx.doi.org/10.1016/j.microrel.2017.06.082

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Abstract

Condition monitoring using temperature sensitive electrical parameters (TSEPs) is widely recognized as an enabler for health management of power modules. The on-state resistance/forward voltage of MOSFETs, IGBTs and diodes has already been identified as TSEPs by several researchers. However, for SiC MOSFETs, the temperature sensitivity of on-state voltage/resistance varies depending on the device and is generally not as high as in silicon devices. Recently the turn-on current switching rate has been identified as a TSEP in SiC MOSFETs, but its temperature sensitivity was shown to be significantly affected by the gate resistance. Hence, an important consideration regarding the use of TSEPs for health monitoring is how the gate driver can be used for improving the temperature sensitivity of determined electrical parameters and implementing more effective condition monitoring strategies. This paper characterizes the impact of the gate driver voltage on the temperature sensitivity of the on-state resistance and current switching rate of SiC power MOSFETs. It is shown that the temperature sensitivity of the switching rate in SiC MOSFETs increases if the devices are driven at lower gate voltages. It is also shown, that depending on the SiC MOSFET technology, reducing the gate drive voltage can increase the temperature sensitivity of the on-state resistance. Hence, using an intelligent gate driver with the capability of customizing occasional switching pulses for junction temperature sensing using TSEPs, it would be possible to implement condition monitoring more effectively for SiC power devices.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors, Silicon carbide -- Electric properties
Journal or Publication Title: Microelectronics Reliability
Publisher: Pergamon-Elsevier Science Ltd.
ISSN: 0026-2714
Official Date: September 2017
Dates:
DateEvent
September 2017Published
18 July 2017Available
29 June 2017Accepted
28 May 2017Submitted
Volume: 76-77
Page Range: pp. 470-474
DOI: 10.1016/j.microrel.2017.06.082
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/K034804/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

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