Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

P-type β-gallium oxide : a new perspective for power and optoelectronic devices

Tools
- Tools
+ Tools

Chikoidze, E., Fellous, A., Perez-Tomas, A., Sauthier, G., Tchelidze, T., Ton-That, C., Huynh, T. T., Phillips, M., Russell, Stephen, Jennings, M. R. (Michael R.), Berini, B., Jomard, F. and Dumont, Y. (2017) P-type β-gallium oxide : a new perspective for power and optoelectronic devices. Materials Today Physics, 3 . pp. 118-126. doi:10.1016/j.mtphys.2017.10.002

[img]
Preview
PDF
WRAP-P-type-B-gallium-ocise-Jennings-2017.pdf - Accepted Version - Requires a PDF viewer.

Download (1381Kb) | Preview
Official URL: https://doi.org/10.1016/j.mtphys.2017.10.002

Request Changes to record.

Abstract

Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) – O2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH): Wide gap semiconductors, Optoelectronic devices, Gallium compounds -- Electric properties, Thermodynamics -- Tables
Journal or Publication Title: Materials Today Physics
Publisher: Elsevier
ISSN: 2542-5293
Official Date: December 2017
Dates:
DateEvent
December 2017Published
12 October 2017Available
4 October 2017Accepted
Volume: 3
Page Range: pp. 118-126
DOI: 10.1016/j.mtphys.2017.10.002
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
ENE2015-74275-JIN European Regional Development Fundhttp://dx.doi.org/10.13039/501100008530
ICN2 European Regional Development Fundhttp://dx.doi.org/10.13039/501100008530
SEV-2013-0295Ministerio de Economía y Competitividadhttp://dx.doi.org/10.13039/501100003329

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us