Veal, T. D. (Tim D.), Piper, L. F. J., Jefferson, Paul Harvey, Mahboob, I., McConville, C. F. (Chris F.), Merrick, M., Hosea, T. J. C., Murdin, B. N. and Hopkinson, M.. (2005) Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys. Applied Physics Letters, Vol.87 (No.18). p. 182114. ISSN 0003-6951

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Abstract

Photoluminescence (PL) has been observed from dilute InNxAs1–x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5×5) k·p Hamiltonian.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Indium compounds, Photoluminescence, Semiconductors, Molecular beam epitaxy, Red shift, Energy gap (Physics)
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	28 October 2005
Volume:	Vol.87
Number:	No.18
Page Range:	p. 182114
Identification Number:	10.1063/1.2126117
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	GR/S56030/01 (EPSRC)
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URI:	http://wrap.warwick.ac.uk/id/eprint/981

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