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Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

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Quinn, P. D., Wilson, Neil R., Hatfield, S. A., McConville, C. F. (Chris F.), Bell, Gavin R., Noakes, T. C. Q., Bailey, P., Al-Harthi, S. and Grad, F.. (2005) Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, Vol.87 (No.15). p. 153110. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2099533

Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Indium compounds, Gallium arsenide semiconductors, Quantum dots, Epitaxy
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	5 October 2005
Volume:	Vol.87
Number:	No.15
Page Range:	p. 153110
Identification Number:	10.1063/1.2099533
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Royal Society (Great Britain), Engineering and Physical Sciences Research Council (EPSRC)
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URI:	http://wrap.warwick.ac.uk/id/eprint/982