Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

Tools
- Tools
+ Tools

Quinn, P. D., Wilson, Neil R., Hatfield, S. A., McConville, C. F. (Chris F.), Bell, Gavin R., Noakes, T. C. Q., Bailey, P., Al-Harthi, S. and Grad, F. (2005) Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, Vol.87 (No.15). p. 153110. doi:10.1063/1.2099533

[img]
Preview
PDF
WRAP_Quinn_Composition_profiles.pdf - Requires a PDF viewer.

Download (139Kb)
Official URL: http://dx.doi.org/10.1063/1.2099533

Request Changes to record.

Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Indium compounds, Gallium arsenide semiconductors, Quantum dots, Epitaxy
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 5 October 2005
Dates:
DateEvent
5 October 2005Published
Volume: Vol.87
Number: No.15
Page Range: p. 153110
DOI: 10.1063/1.2099533
Status: Peer Reviewed
Access rights to Published version: Open Access
Funder: Royal Society (Great Britain), Engineering and Physical Sciences Research Council (EPSRC)

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us