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Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering
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Quinn, P. D., Wilson, Neil Richard, 1977-, Hatfield, S. A., McConville, C. F. (Chris F.), Bell, Gavin R., Noakes, T. C. Q., Bailey, P., Al-Harthi, S. and Grad, F.. (2005) Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, Vol.87 (No.15). p. 153110. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2099533
Abstract
The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Indium compounds, Gallium arsenide semiconductors, Quantum dots, Epitaxy |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 5 October 2005 |
| Volume: | Vol.87 |
| Number: | No.15 |
| Page Range: | p. 153110 |
| Identification Number: | 10.1063/1.2099533 |
| Status: | Peer Reviewed |
| Access rights to Published version: | Open Access |
| Funder: | Royal Society (Great Britain), Engineering and Physical Sciences Research Council (EPSRC) |
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| URI: | http://wrap.warwick.ac.uk/id/eprint/982 |
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