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Band gap reduction in GaNSb alloys due to the anion mismatch

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Veal, T. D. (Tim D.), Piper, L. F. J., Jollands, Stuart, Bennett, B. R., Jefferson, Paul Harvey, Thomas, Pam A., McConville, C. F. (Chris F.), Murdin, B. N., Buckle, L., Smith, G. W. and Ashley, T.. (2005) Band gap reduction in GaNSb alloys due to the anion mismatch. Applied Physics Letters, Vol.87 (No.13). p. 132101. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.2058224

Abstract

The structural and optoelectronic properties in GaNxSb1–x alloys (0<=x<0.02) grown by molecular-beam epitaxy on both GaSb substrates and AlSb buffer layers on GaAs substrates are investigated. High-resolution x-ray diffraction (XRD) and reciprocal space mapping indicate that the GaNxSb1–x epilayers are of high crystalline quality and the alloy composition is found to be independent of substrate, for identical growth conditions. The band gap of the GaNSb alloys is found to decrease with increasing nitrogen content from absorption spectroscopy. Strain-induced band-gap shifts, Moss-Burstein effects, and band renormalization were ruled out by XRD and Hall measurements. The band-gap reduction is solely due to the substitution of dilute amounts of highly electronegative nitrogen for antimony, and is greater than observed in GaNAs with the same N content.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Gallium compounds, Molecular beam epitaxy, Compound semiconductors, Hall effect, Energy gap (Physics)
Journal or Publication Title:	Applied Physics Letters
Publisher:	0003-6951
ISSN:	0003-6951
Date:	19 September 2005
Volume:	Vol.87
Number:	No.13
Page Range:	p. 132101
Identification Number:	10.1063/1.2058224
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	GR/R82630/01 (EPSRC), GR/S56030/01 (EPSRC)
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URI:	http://wrap.warwick.ac.uk/id/eprint/983