Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys
Veal, T. D. (Tim D.), Mahboob, I., Piper, L. F. J., McConville, C. F. (Chris F.) and Hopkinson, M.. (2004) Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys. Applied Physics Letters, Vol.85 (No.9). 091550. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.1784886
The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07<x<0.11 have been studied using x-ray photoelectron spectroscopy (XPS). In contrast to previous studies of alloys with x>=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Divisions:||Faculty of Science > Physics|
|Library of Congress Subject Headings (LCSH):||Gallium arsenide, Wide gap semiconductors, Photoemission, Molecular beam epitaxy, Chemical bonds, X-ray photoelectron spectroscopy, Gallium compounds|
|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Official Date:||30 August 2004|
|Access rights to Published version:||Open Access|
# M. Kondow, K. Uomi, A. Niva, T. Kitatani, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
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