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Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys
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Veal, T. D. (Tim D.), Mahboob, I., Piper, L. F. J., McConville, C. F. (Chris F.) and Hopkinson, M.. (2004) Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys. Applied Physics Letters, Vol.85 (No.9). 091550. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.1784886
Abstract
The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07<x<0.11 have been studied using x-ray photoelectron spectroscopy (XPS). In contrast to previous studies of alloys with x>=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Gallium arsenide, Wide gap semiconductors, Photoemission, Molecular beam epitaxy, Chemical bonds, X-ray photoelectron spectroscopy, Gallium compounds |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 30 August 2004 |
| Volume: | Vol.85 |
| Number: | No.9 |
| Page Range: | 091550 |
| Identification Number: | 10.1063/1.1784886 |
| Status: | Peer Reviewed |
| Access rights to Published version: | Open Access |
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| URI: | http://wrap.warwick.ac.uk/id/eprint/985 |
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