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Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys

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Veal, T. D. (Tim D.), Mahboob, I., Piper, L. F. J., McConville, C. F. (Chris F.) and Hopkinson, M.. (2004) Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys. Applied Physics Letters, Vol.85 (No.9). 091550. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.1784886

Abstract

The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07<x<0.11 have been studied using x-ray photoelectron spectroscopy (XPS). In contrast to previous studies of alloys with x>=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Gallium arsenide, Wide gap semiconductors, Photoemission, Molecular beam epitaxy, Chemical bonds, X-ray photoelectron spectroscopy, Gallium compounds

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

30 August 2004

Dates:

Date	Event
30 August 2004	Published

Volume:

Vol.85

Number:

No.9

Page Range:

091550

Identification Number:

10.1063/1.1784886

Status:

Peer Reviewed

Access rights to Published version:

Open Access

References:

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URI:

http://wrap.warwick.ac.uk/id/eprint/985

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