Veal, T. D. (Tim D.), Mahboob, I., Piper, L. F. J., McConville, C. F. (Chris F.) and Hopkinson, M. (2004) Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys. Applied Physics Letters, Vol.85 (No.9). 091550. doi:10.1063/1.1784886

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Abstract

The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07<x<0.11 have been studied using x-ray photoelectron spectroscopy (XPS). In contrast to previous studies of alloys with x>=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Gallium arsenide, Wide gap semiconductors, Photoemission, Molecular beam epitaxy, Chemical bonds, X-ray photoelectron spectroscopy, Gallium compounds
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	30 August 2004
Dates:	Date Event 30 August 2004 Published
Volume:	Vol.85
Number:	No.9
Page Range:	091550
DOI:	10.1063/1.1784886
Status:	Peer Reviewed
Access rights to Published version:	Open Access

Data sourced from Thomson Reuters' Web of Knowledge

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