Myranov, Maksym, Mironov, Oleg A., Durov, Sergiy, Whall, Terry E., Parker, Evan H. C., Hackbarth, T., Höck, G., Herzog, H.-J. and König, U.. (2004) Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor. Applied Physics Letters, Vol.84 (No.4). pp. 610-612. ISSN 0003-6951

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Abstract

We have demonstrated reduced 1/f low-frequency noise in sub-µm metamorphic high Ge content p-Si0.3Ge0.7 metal–oxide–semiconductor field-effect transistors (MOSFETs) at 293 K. Three times lower normalized power spectral density (NPSD) SID/I_D² of drain current fluctuations over the 1–100 Hz range at VDS = –50 mV and VG–Vth = –1.5 V was measured for a 0.55 µm effective gate length p-Si0.3Ge0.7 MOSFET compared with a p-Si MOSFET. Performed quantitative analysis clearly demonstrates the importance of carrier number fluctuations and correlated mobility fluctuations (CMFs) components of 1/f noise for p-Si surface channel MOSFETs, and the absence of CMFs for p-Si0.3Ge0.7 buried channel MOSFETs. This explains the reduced NPSD for p-Si0.3Ge0.7 MOSFETs in strong inversion.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Germanium alloys, Silicon alloys, Metal oxide semiconductor field-effect transistors, Semiconductors
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	26 January 2004
Volume:	Vol.84
Number:	No.4
Page Range:	pp. 610-612
Identification Number:	10.1063/1.1643532
Status:	Peer Reviewed
Access rights to Published version:	Open Access
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URI:	http://wrap.warwick.ac.uk/id/eprint/986

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