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Electron dynamics in InNxSb1–x
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Mahboob, I., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2003) Electron dynamics in InNxSb1–x. Applied Physics Letters, Vol.83 (No.11). pp. 2169-2171. doi:10.1063/1.1611270 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.1611270
Abstract
Electron transport properties in InNxSb1–x are investigated for a range of alloy compositions. The band structure of InNxSb1–x is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E– subband. These calculations reveal that for alloy compositions in the range 0.001<=x<=0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InNxSb1–x alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Indium compounds, Compound semiconductors, Wide gap semiconductors, Electron distribution | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 15 September 2003 | ||||
Dates: |
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Volume: | Vol.83 | ||||
Number: | No.11 | ||||
Page Range: | pp. 2169-2171 | ||||
DOI: | 10.1063/1.1611270 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | GR/R93872/ 01 (EPSRC) |
Data sourced from Thomson Reuters' Web of Knowledge
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