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Electron dynamics in InNxSb1–x

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Mahboob, I., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.). (2003) Electron dynamics in InNxSb1–x. Applied Physics Letters, Vol.83 (No.11). pp. 2169-2171. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.1611270

Abstract

Electron transport properties in InNxSb1–x are investigated for a range of alloy compositions. The band structure of InNxSb1–x is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E– subband. These calculations reveal that for alloy compositions in the range 0.001<=x<=0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InNxSb1–x alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Indium compounds, Compound semiconductors, Wide gap semiconductors, Electron distribution

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

15 September 2003

Dates:

Date	Event
15 September 2003	Published

Volume:

Vol.83

Number:

No.11

Page Range:

pp. 2169-2171

Identification Number:

10.1063/1.1611270

Status:

Peer Reviewed

Access rights to Published version:

Open Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

Grant number:

GR/R93872/ 01 (EPSRC)

References:

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# T. D. Veal and C. F. McConville, Phys. Rev. B 64, 085311 (2001).
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URI:

http://wrap.warwick.ac.uk/id/eprint/987

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