Mahboob, I., Veal, T. D. (Tim D.) and McConville, C. F. (Chris F.) (2003) Electron dynamics in InNxSb1–x. Applied Physics Letters, Vol.83 (No.11). pp. 2169-2171. doi:10.1063/1.1611270

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Abstract

Electron transport properties in InNxSb1–x are investigated for a range of alloy compositions. The band structure of InNxSb1–x is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E– subband. These calculations reveal that for alloy compositions in the range 0.001<=x<=0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InNxSb1–x alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Indium compounds, Compound semiconductors, Wide gap semiconductors, Electron distribution
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	15 September 2003
Dates:	Date Event 15 September 2003 Published
Volume:	Vol.83
Number:	No.11
Page Range:	pp. 2169-2171
DOI:	10.1063/1.1611270
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	GR/R93872/ 01 (EPSRC)

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