Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers
UNSPECIFIED. (2003) Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers. IEE PROCEEDINGS-OPTOELECTRONICS, 150 (1). pp. 102-104. ISSN 1350-2433Full text not available from this repository.
Official URL: http://dx.doi.org/10.1049/ip-opt:20030045
The electronic properties of epitaxial layers of InNxSb1-x grown oil GaAs (001) substrates have been investigated using high-resolution electron-energy-loss spectroscopy (HREELS), Hall measurements and band structure modelled by a modified k(.)p Hamiltonian. The chemical composition of the epitaxial layers was found to be InN0.02Sb0.98 from secondary ion mass spectrometry (SIMS). However, electrical measurements and band structure calculations indicate a band gap of 135 meV, thus entailing an epilayer composition of InN0.0015Sb0.9985, indicating that approxirriately 7.5% of the nitrogen present is electrically active, being located substitutionally on antimony lattice sites. Hall measurements and simulations of HREEL spectra imply a much larger effective mass at the Fermi level than a conventional Kane band structure material with an equivalent band gap.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||IEE PROCEEDINGS-OPTOELECTRONICS|
|Publisher:||IEE-INST ELEC ENG|
|Number of Pages:||3|
|Page Range:||pp. 102-104|
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