UNSPECIFIED. (2003) Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers. IEE PROCEEDINGS-OPTOELECTRONICS, 150 (1). pp. 102-104. ISSN 1350-2433

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Abstract

The electronic properties of epitaxial layers of InNxSb1-x grown oil GaAs (001) substrates have been investigated using high-resolution electron-energy-loss spectroscopy (HREELS), Hall measurements and band structure modelled by a modified k(.)p Hamiltonian. The chemical composition of the epitaxial layers was found to be InN0.02Sb0.98 from secondary ion mass spectrometry (SIMS). However, electrical measurements and band structure calculations indicate a band gap of 135 meV, thus entailing an epilayer composition of InN0.0015Sb0.9985, indicating that approxirriately 7.5% of the nitrogen present is electrically active, being located substitutionally on antimony lattice sites. Hall measurements and simulations of HREEL spectra imply a much larger effective mass at the Fermi level than a conventional Kane band structure material with an equivalent band gap.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Journal or Publication Title:	IEE PROCEEDINGS-OPTOELECTRONICS
Publisher:	IEE-INST ELEC ENG
ISSN:	1350-2433
Date:	February 2003
Volume:	150
Number:	1
Number of Pages:	3
Page Range:	pp. 102-104
Identification Number:	10.1049/ip-opt:20030045
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/9877

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