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Effect of hydrogen in dilute InNxSb1–x alloys grown by molecular beam epitaxy

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Veal, T. D. (Tim D.), Mahboob, I., McConville, C. F. (Chris F.), Burke, T. M. and Ashley, T.. (2003) Effect of hydrogen in dilute InNxSb1–x alloys grown by molecular beam epitaxy. Applied Physics Letters, Vol.83 (No.9). pp. 1776-1778. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.1604463

Abstract

The electronic properties and nitrogen bonding configurations are investigated in dilute InNxSb1–x alloys grown by molecular beam epitaxy using a mixed nitrogen and hydrogen plasma. High-resolution electron-energy-loss spectroscopy is used to observe annealing-induced changes in the conduction band electron plasma frequency and plasmon lifetime. X-ray photoelectron spectroscopy of the N 1s core level indicates that a large proportion of the nitrogen in the InNxSb1–x alloy is contained within neutral N–H complexes. Annealing at 300 °C removes hydrogen from these complexes, increasing the concentration of isoelectronic nitrogen acceptors. This increases the ionized impurity scattering and reduces the background conduction electron density.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Compund semiconductors, Wide gap semiconductors, Indium compounds, Molecular beam epitaxy, Conduction band

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

1 September 2003

Dates:

Date	Event
1 September 2003	Published

Volume:

Vol.83

Number:

No.9

Page Range:

pp. 1776-1778

Identification Number:

10.1063/1.1604463

Status:

Peer Reviewed

Access rights to Published version:

Open Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

Grant number:

GR/R93872/01 (EPSRC)

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