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Effect of hydrogen in dilute InNxSb1–x alloys grown by molecular beam epitaxy
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Veal, T. D. (Tim D.), Mahboob, I., McConville, C. F. (Chris F.), Burke, T. M. and Ashley, T. (2003) Effect of hydrogen in dilute InNxSb1–x alloys grown by molecular beam epitaxy. Applied Physics Letters, Vol.83 (No.9). pp. 1776-1778. doi:10.1063/1.1604463
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Official URL: http://dx.doi.org/10.1063/1.1604463
Abstract
The electronic properties and nitrogen bonding configurations are investigated in dilute InNxSb1–x alloys grown by molecular beam epitaxy using a mixed nitrogen and hydrogen plasma. High-resolution electron-energy-loss spectroscopy is used to observe annealing-induced changes in the conduction band electron plasma frequency and plasmon lifetime. X-ray photoelectron spectroscopy of the N 1s core level indicates that a large proportion of the nitrogen in the InNxSb1–x alloy is contained within neutral N–H complexes. Annealing at 300 °C removes hydrogen from these complexes, increasing the concentration of isoelectronic nitrogen acceptors. This increases the ionized impurity scattering and reduces the background conduction electron density.
| Item Type: | Journal Article | ||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Compund semiconductors, Wide gap semiconductors, Indium compounds, Molecular beam epitaxy, Conduction band | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 1 September 2003 | ||||
| Dates: |
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| Volume: | Vol.83 | ||||
| Number: | No.9 | ||||
| Page Range: | pp. 1776-1778 | ||||
| DOI: | 10.1063/1.1604463 | ||||
| Status: | Peer Reviewed | ||||
| Access rights to Published version: | Open Access | ||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | GR/R93872/01 (EPSRC) |
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