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Effect of hydrogen in dilute InNxSb1–x alloys grown by molecular beam epitaxy

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Veal, T. D. (Tim D.), Mahboob, I., McConville, C. F. (Chris F.), Burke, T. M. and Ashley, T.. (2003) Effect of hydrogen in dilute InNxSb1–x alloys grown by molecular beam epitaxy. Applied Physics Letters, Vol.83 (No.9). pp. 1776-1778. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.1604463

Abstract

The electronic properties and nitrogen bonding configurations are investigated in dilute InNxSb1–x alloys grown by molecular beam epitaxy using a mixed nitrogen and hydrogen plasma. High-resolution electron-energy-loss spectroscopy is used to observe annealing-induced changes in the conduction band electron plasma frequency and plasmon lifetime. X-ray photoelectron spectroscopy of the N 1s core level indicates that a large proportion of the nitrogen in the InNxSb1–x alloy is contained within neutral N–H complexes. Annealing at 300 °C removes hydrogen from these complexes, increasing the concentration of isoelectronic nitrogen acceptors. This increases the ionized impurity scattering and reduces the background conduction electron density.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Compund semiconductors, Wide gap semiconductors, Indium compounds, Molecular beam epitaxy, Conduction band
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	1 September 2003
Volume:	Vol.83
Number:	No.9
Page Range:	pp. 1776-1778
Identification Number:	10.1063/1.1604463
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	GR/R93872/01 (EPSRC)
References:	# I. A. Buyanova, W. M. Chen, and B. Monemar, MRS Internet J. Nitride Semicond. Res. 2, 2 (2001). # M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 2 35, 1273 (1996). # T. Ashley, T. M. Burke, G. J. Pryce, A. R. Adams, A. Andreev, B. N. Murdin, E. P. O'Reilly, and C. R. Pidgeon, Solid-State Electron. 47, 387 (2003). # A. D. Johnson, R. H. Bennett, J. Newey, G. J. Pryce, G. M. Williams, and T. M. Burke, Mater. Res. Soc. Symp. Proc. 607, 23 (2000). # B. N. Murdin, M. Kamal-Saadi, A. Lindsay, E. P. O'Reilly, A. R. Adams, G. J. Nott, J. G. Crowder, C. R. Pidgeon, I. V. Bradley, J.-P. R. Wells, T. Burke, A. D. Johnson, and T. Ashley, Appl. Phys. Lett. 78, 1568 (2001). # B. N. Murdin, A. R. Adams, P. Murzyn, C. R. Pidgeon, I. V. Bradley, J.-P. R. Wells, Y. H. Matsuda, N. Miura, T. Burke, and A. D. Johnson, Appl. Phys. Lett. 81, 256 (2002). # J.-D. Hecht, F. Frost, D. Hirsch, H. Neumann, A. Schindler, A. B. Preobrajenski, and T. Chassé, J. Appl. Phys. 90, 6066 (2001). # J.-P. Zhang, D.-Z. Sun, X.-L. Wang, M.-Y. Kong, Y.-P. Zeng, J.-M. Li, and L.-Y. Lin, Semicond. Sci. Technol. 14, 403 (1999). # H. Liu, D. C. Bertolet, and J. W. Rogers, Jr., Surf. Sci. 320, 145 (1994). # H. Ma, Y. Berthier, and P. Marcus, Appl. Surf. Sci. 153, 40 (1999). # Ph. Lambin, J. P. Vigneron, and A. A. Lucas, Phys. Rev. B 32, 8203 (1985). # T. D. Veal and C. F. McConville, Phys. Rev. B 64, 085311 (2001). # H. P. Xin, C. W. Tu, and M. Geva, J. Vac. Sci. Technol. B 18, 1476 (2000). # J. J. Hopfield, D. G. Thomas, and R. T. Lynch, Phys. Rev. Lett. 17, 312 (1966). # A. Janotti, S. B. Zhang, S.-H. Wei, and C. G. Van de Walle, Phys. Rev. Lett. 89, 086403 (2002). # I. Mahboob, T. D. Veal, and C. F. McConville, Appl. Phys. Lett. (in press).
URI:	http://wrap.warwick.ac.uk/id/eprint/988