Irisawa, T., Myranov, Maksym, Mironov, Oleg A., Parker, Evan H. C., Nakagawa, Kiyokazu, Murata, M., Koh, S. and Shiraki, Y.. (2003) Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures. Applied Physics Letters, Vol.82 (No.9). pp. 1425-1427. ISSN 0003-6951

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Abstract

We performed systematic low-temperature (T = 350 mK–15 K) magnetotransport measurements on the two-dimensional hole gas with various sheet carrier densities Ps = (0.57–2.1)×1012 cm–2 formed in the strained Ge channel modulation-doped (MOD) SiGe heterostructures grown on Si substrates. It was found that the effective hole mass deduced by temperature dependent Shubnikov–de Hass oscillations increased monotonically from (0.087±0.05)m0 to (0.19±0.01)m0 with the increase of Ps, showing large band nonparabolicity in strained Ge. In contrast to this result, the increase of the mobility with increasing Ps (up to 29 000 cm2/V s) was observed, suggesting that Coulomb scattering played a dominant role in the transport of the Ge channel at low temperatures. In addition, the Dingle ratio of the transport time to the quantum lifetime was found to increase with increasing Ps, which was attributed to the increase of remote impurity scattering with the increase of the doping concentration in MOD SiGe layers.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Germanium alloys, Silicon alloys, Semiconductors -- Juctions, Holes (Electron deficiencies), Fermi surfaces
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	3 March 2003
Volume:	Vol.82
Number:	No.9
Page Range:	pp. 1425-1427
Identification Number:	10.1063/1.1558895
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Japan. Monbu Kagakushō [Japan. Ministry of Education, Culture, Sports, Science and Technology] (MK), Nihon Gakujutsu Shinkōkai [Japan Society for the Promotion of Science] (NGS), International Association for the Promotion of Co-operation with Scientists from the Independent States of the Former Soviet Union (INTAS)
Grant number:	11232202 (MK), 13650007 (MK), INTAS-01-0184 (INTAS)
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URI:	http://wrap.warwick.ac.uk/id/eprint/989

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